Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As pr...

Full description

Saved in:
Bibliographic Details
Main Authors: Michael I. Current, Takuya Sakaguchi, Yoji Kawasaki, Viktor Samu, Anita Pongracz, Luca Sinko, Arpad Kerekes, Zsolt Durko
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Ion channeling
photoluminescence,secondary ion mass spectroscopy
spreading resistance profiling
Monte Carlo ion range profiles
Online Access:https://ieeexplore.ieee.org/document/10475707/
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As profiles and various combinations of co-implants with 50 keV Phosphorus implants in Silicon(100). The effects of annealing on the 10 MeV profiles showed the strong shifts in PL data from implant damage in the as-implanted and annealed samples. Curious “intermittencies” were seen in the PL signals from MeV implant defect centers.
ISSN:2168-6734

Similar Items