Resonant Spin Amplification and Accumulation in MAPbI3 Single Crystals
Abstract Quantum technologic and spintronic applications require reliable semiconducting materials that enable a significant, long‐living spin polarization of electronic excitations and offer the ability to manipulate it optically in an external field. Due to the specifics of band structure and rema...
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| Format: | Article |
| Language: | English |
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Wiley
2025-07-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202502735 |
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| author | Erik Kirstein Dmitri R. Yakovlev Evgeny A. Zhukov Nataliia E. Kopteva Bekir Turedi Maksym V. Kovalenko Manfred Bayer |
| author_facet | Erik Kirstein Dmitri R. Yakovlev Evgeny A. Zhukov Nataliia E. Kopteva Bekir Turedi Maksym V. Kovalenko Manfred Bayer |
| author_sort | Erik Kirstein |
| collection | DOAJ |
| description | Abstract Quantum technologic and spintronic applications require reliable semiconducting materials that enable a significant, long‐living spin polarization of electronic excitations and offer the ability to manipulate it optically in an external field. Due to the specifics of band structure and remarkable spin‐dependent properties, the lead halide perovskite semiconductors are suitable candidates for that. Here, the carrier spin dynamics in a MAPbI3 (MA = methylammonium) perovskite single crystal with thickness of 20 µm are studied by the time‐resolved Kerr ellipticity technique at cryogenic temperatures. Long times of longitudinal electron spin relaxation T1 = 30 ns and transverse electron spin dephasing T2,e∗=21 ns are found. The spin dynamics lasting longer than the applied laser pulse repetition period give rise to spin accumulation effects. They are exploited through the resonant spin amplification, polarization recovery, and spin inertia techniques to study the electron and hole spin systems coupled with the nuclear spins. These results establish the lead halide perovskite semiconductors as suitable platform for quantum technologies relying on spin‐dependent phenomena. |
| format | Article |
| id | doaj-art-b5a33fb37c1d4fd9b7e940d4cd58834c |
| institution | DOAJ |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Wiley |
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| series | Advanced Science |
| spelling | doaj-art-b5a33fb37c1d4fd9b7e940d4cd58834c2025-08-20T03:12:02ZengWileyAdvanced Science2198-38442025-07-011227n/an/a10.1002/advs.202502735Resonant Spin Amplification and Accumulation in MAPbI3 Single CrystalsErik Kirstein0Dmitri R. Yakovlev1Evgeny A. Zhukov2Nataliia E. Kopteva3Bekir Turedi4Maksym V. Kovalenko5Manfred Bayer6Technische Universität Dortmund Experimentelle Physik 2 44227 Dortmund GermanyTechnische Universität Dortmund Experimentelle Physik 2 44227 Dortmund GermanyTechnische Universität Dortmund Experimentelle Physik 2 44227 Dortmund GermanyTechnische Universität Dortmund Experimentelle Physik 2 44227 Dortmund GermanyDepartment of Chemistry and Applied Biosciences Laboratory of Inorganic Chemistry, ETH Zürich Zürich 8093 SwitzerlandDepartment of Chemistry and Applied Biosciences Laboratory of Inorganic Chemistry, ETH Zürich Zürich 8093 SwitzerlandTechnische Universität Dortmund Experimentelle Physik 2 44227 Dortmund GermanyAbstract Quantum technologic and spintronic applications require reliable semiconducting materials that enable a significant, long‐living spin polarization of electronic excitations and offer the ability to manipulate it optically in an external field. Due to the specifics of band structure and remarkable spin‐dependent properties, the lead halide perovskite semiconductors are suitable candidates for that. Here, the carrier spin dynamics in a MAPbI3 (MA = methylammonium) perovskite single crystal with thickness of 20 µm are studied by the time‐resolved Kerr ellipticity technique at cryogenic temperatures. Long times of longitudinal electron spin relaxation T1 = 30 ns and transverse electron spin dephasing T2,e∗=21 ns are found. The spin dynamics lasting longer than the applied laser pulse repetition period give rise to spin accumulation effects. They are exploited through the resonant spin amplification, polarization recovery, and spin inertia techniques to study the electron and hole spin systems coupled with the nuclear spins. These results establish the lead halide perovskite semiconductors as suitable platform for quantum technologies relying on spin‐dependent phenomena.https://doi.org/10.1002/advs.202502735carrier spin dynamicslead halide perovskite crystalsresonant spin amplificationspintronicstime‐resolved kerr ellipticity |
| spellingShingle | Erik Kirstein Dmitri R. Yakovlev Evgeny A. Zhukov Nataliia E. Kopteva Bekir Turedi Maksym V. Kovalenko Manfred Bayer Resonant Spin Amplification and Accumulation in MAPbI3 Single Crystals Advanced Science carrier spin dynamics lead halide perovskite crystals resonant spin amplification spintronics time‐resolved kerr ellipticity |
| title | Resonant Spin Amplification and Accumulation in MAPbI3 Single Crystals |
| title_full | Resonant Spin Amplification and Accumulation in MAPbI3 Single Crystals |
| title_fullStr | Resonant Spin Amplification and Accumulation in MAPbI3 Single Crystals |
| title_full_unstemmed | Resonant Spin Amplification and Accumulation in MAPbI3 Single Crystals |
| title_short | Resonant Spin Amplification and Accumulation in MAPbI3 Single Crystals |
| title_sort | resonant spin amplification and accumulation in mapbi3 single crystals |
| topic | carrier spin dynamics lead halide perovskite crystals resonant spin amplification spintronics time‐resolved kerr ellipticity |
| url | https://doi.org/10.1002/advs.202502735 |
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