Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance
This article compares p-GaN-gate all-GaN cascode devices with standalone E-mode HEMTs on SiC substrates, with a focus on double pulse testing (DPT), a critical method for evaluating switching performance under realistic operating conditions. The all-GaN cascode, featuring a gate width of 85 mm, demo...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11049654/ |
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