Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance
This article compares p-GaN-gate all-GaN cascode devices with standalone E-mode HEMTs on SiC substrates, with a focus on double pulse testing (DPT), a critical method for evaluating switching performance under realistic operating conditions. The all-GaN cascode, featuring a gate width of 85 mm, demo...
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/11049654/ |
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| author | Dian-Ying Wu Chih-Yung Hsieh Yi-Xian Huang Yu-Chen Liu Wen-Ching Hsu Ci-Ze Li Jia-Zhe Liu Cheng-Yeu Wu Meng-Chyi Wu |
| author_facet | Dian-Ying Wu Chih-Yung Hsieh Yi-Xian Huang Yu-Chen Liu Wen-Ching Hsu Ci-Ze Li Jia-Zhe Liu Cheng-Yeu Wu Meng-Chyi Wu |
| author_sort | Dian-Ying Wu |
| collection | DOAJ |
| description | This article compares p-GaN-gate all-GaN cascode devices with standalone E-mode HEMTs on SiC substrates, with a focus on double pulse testing (DPT), a critical method for evaluating switching performance under realistic operating conditions. The all-GaN cascode, featuring a gate width of 85 mm, demonstrates a current rating of 15.6 A, an on-resistance of 7.7 m<inline-formula> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula>-cm2, a breakdown voltage of 970 V, and turn-on/off times of 71/52 ns, respectively. Additionally, it exhibits switching energy losses of 17/<inline-formula> <tex-math notation="LaTeX">$8.2~\mu $ </tex-math></inline-formula>J at <inline-formula> <tex-math notation="LaTeX">$V_{DS} \,\, {=} \,\, 400$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$I_{DS} \,\, {=} \,\, 1$ </tex-math></inline-formula> A. Its dynamic RDS,on is measured at <inline-formula> <tex-math notation="LaTeX">$0.7~\Omega $ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$V_{DS} \,\, {=} \,\, 300$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$I_{DS} \,\, {=} \,\, 1$ </tex-math></inline-formula> A. The experimental results indicate a significant improvement compared to the standalone E-mode HEMT. This highlights the advantages of the all-GaN cascode in reducing dynamic resistance and enhancing switching efficiency, making it an excellent choice for high-performance applications. |
| format | Article |
| id | doaj-art-b575e64258b143fdac81caedeca1b1e8 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-b575e64258b143fdac81caedeca1b1e82025-08-20T03:58:10ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011364264810.1109/JEDS.2025.358234211049654Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching PerformanceDian-Ying Wu0https://orcid.org/0009-0000-5487-035XChih-Yung Hsieh1Yi-Xian Huang2https://orcid.org/0009-0009-9455-527XYu-Chen Liu3https://orcid.org/0009-0004-7382-3611Wen-Ching Hsu4Ci-Ze Li5Jia-Zhe Liu6Cheng-Yeu Wu7https://orcid.org/0000-0002-8341-7965Meng-Chyi Wu8https://orcid.org/0000-0002-4428-803XInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, TaiwanInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, TaiwanInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, TaiwanInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, TaiwanInnovation Technology Research Center, Global Wafers Company, Hsinchu, TaiwanInnovation Technology Research Center, Global Wafers Company, Hsinchu, TaiwanInnovation Technology Research Center, Global Wafers Company, Hsinchu, TaiwanDepartment of Surgery, Division of Plastic and Reconstructive Surgery, Veterans General Hospital, Taichung, TaiwanInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, TaiwanThis article compares p-GaN-gate all-GaN cascode devices with standalone E-mode HEMTs on SiC substrates, with a focus on double pulse testing (DPT), a critical method for evaluating switching performance under realistic operating conditions. The all-GaN cascode, featuring a gate width of 85 mm, demonstrates a current rating of 15.6 A, an on-resistance of 7.7 m<inline-formula> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula>-cm2, a breakdown voltage of 970 V, and turn-on/off times of 71/52 ns, respectively. Additionally, it exhibits switching energy losses of 17/<inline-formula> <tex-math notation="LaTeX">$8.2~\mu $ </tex-math></inline-formula>J at <inline-formula> <tex-math notation="LaTeX">$V_{DS} \,\, {=} \,\, 400$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$I_{DS} \,\, {=} \,\, 1$ </tex-math></inline-formula> A. Its dynamic RDS,on is measured at <inline-formula> <tex-math notation="LaTeX">$0.7~\Omega $ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$V_{DS} \,\, {=} \,\, 300$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$I_{DS} \,\, {=} \,\, 1$ </tex-math></inline-formula> A. The experimental results indicate a significant improvement compared to the standalone E-mode HEMT. This highlights the advantages of the all-GaN cascode in reducing dynamic resistance and enhancing switching efficiency, making it an excellent choice for high-performance applications.https://ieeexplore.ieee.org/document/11049654/High electron mobility transistor (HEMT)all-GaN cascode devicestandalone E-mode HEMTp-GaN-gateMiller effecthigh current |
| spellingShingle | Dian-Ying Wu Chih-Yung Hsieh Yi-Xian Huang Yu-Chen Liu Wen-Ching Hsu Ci-Ze Li Jia-Zhe Liu Cheng-Yeu Wu Meng-Chyi Wu Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance IEEE Journal of the Electron Devices Society High electron mobility transistor (HEMT) all-GaN cascode device standalone E-mode HEMT p-GaN-gate Miller effect high current |
| title | Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance |
| title_full | Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance |
| title_fullStr | Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance |
| title_full_unstemmed | Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance |
| title_short | Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance |
| title_sort | evaluation of p gan gate all gan cascode hemt on sic substrate dc characteristics and switching performance |
| topic | High electron mobility transistor (HEMT) all-GaN cascode device standalone E-mode HEMT p-GaN-gate Miller effect high current |
| url | https://ieeexplore.ieee.org/document/11049654/ |
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