Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance

Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance

This article compares p-GaN-gate all-GaN cascode devices with standalone E-mode HEMTs on SiC substrates, with a focus on double pulse testing (DPT), a critical method for evaluating switching performance under realistic operating conditions. The all-GaN cascode, featuring a gate width of 85 mm, demo...

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Main Authors: Dian-Ying Wu, Chih-Yung Hsieh, Yi-Xian Huang, Yu-Chen Liu, Wen-Ching Hsu, Ci-Ze Li, Jia-Zhe Liu, Cheng-Yeu Wu, Meng-Chyi Wu
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
High electron mobility transistor (HEMT)
all-GaN cascode device
standalone E-mode HEMT
p-GaN-gate
Miller effect
high current
Online Access:https://ieeexplore.ieee.org/document/11049654/
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Summary:This article compares p-GaN-gate all-GaN cascode devices with standalone E-mode HEMTs on SiC substrates, with a focus on double pulse testing (DPT), a critical method for evaluating switching performance under realistic operating conditions. The all-GaN cascode, featuring a gate width of 85 mm, demonstrates a current rating of 15.6 A, an on-resistance of 7.7 m<inline-formula> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula>-cm2, a breakdown voltage of 970 V, and turn-on/off times of 71/52 ns, respectively. Additionally, it exhibits switching energy losses of 17/<inline-formula> <tex-math notation="LaTeX">$8.2~\mu $ </tex-math></inline-formula>J at <inline-formula> <tex-math notation="LaTeX">$V_{DS} \,\, {=} \,\, 400$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$I_{DS} \,\, {=} \,\, 1$ </tex-math></inline-formula> A. Its dynamic RDS,on is measured at <inline-formula> <tex-math notation="LaTeX">$0.7~\Omega $ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$V_{DS} \,\, {=} \,\, 300$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$I_{DS} \,\, {=} \,\, 1$ </tex-math></inline-formula> A. The experimental results indicate a significant improvement compared to the standalone E-mode HEMT. This highlights the advantages of the all-GaN cascode in reducing dynamic resistance and enhancing switching efficiency, making it an excellent choice for high-performance applications.
ISSN:2168-6734

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