The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor
The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR−V) and reverse voltage-temperature (V-T) characteristics, as well as its reverse current temperature dependence. The IR−V characteristics exhibit an almost constant curren...
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| Format: | Article |
| Language: | English |
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Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/71503 |
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| _version_ | 1849396064871776256 |
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| author | L. Magafas N. Georgoulas A. Thanailakis |
| author_facet | L. Magafas N. Georgoulas A. Thanailakis |
| author_sort | L. Magafas |
| collection | DOAJ |
| description | The a-SiC/c-Si(n) isotype heterojunction has been studied
as a temperature sensor by measuring its reverse current-voltage
(IR−V)
and reverse voltage-temperature (V-T)
characteristics, as well as its reverse current temperature
dependence. The IR−V
characteristics exhibit an almost constant
current, whereas the reverse current IR depends strongly on T
(from 230 K up to 320K). The V-T characteristics, at
different reverse currents, reveal a highly temperature sensitive
behavior for the a-SiC/c-Si(n) junction. The measured
values of temperature sensitivity (Δ V/ΔT)max was found to be
(≅−2.5 V/K) in the moderate temperature range, which are
much higher than those obtained with bulk semiconductor
temperature sensors. The high sensitivity-temperature- range of
the a-SiC/c-Si(n) heterojunctions can be controlled
electrically within the regim of values from 230 K up to 320 K.
Finally, the high sensitivity of these devices, in conjunction
with the fact that a-SiC films can be used as an add-on to the
existing Si technology, emerge new possibilities to the
fabrication of high sensitivity temperature microsensors. |
| format | Article |
| id | doaj-art-b569546527ff487980926cf16cd441ce |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1998-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-b569546527ff487980926cf16cd441ce2025-08-20T03:39:26ZengWileyActive and Passive Electronic Components0882-75161563-50311998-01-0120422523410.1155/1998/71503The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature SensorL. Magafas0N. Georgoulas1A. Thanailakis2Laboratory of Electrical and Electronic Material Technology, Department of Electrical and Computer Engineering, Democritous University of Thrace, Xanthi 67100, GreeceLaboratory of Electrical and Electronic Material Technology, Department of Electrical and Computer Engineering, Democritous University of Thrace, Xanthi 67100, GreeceLaboratory of Electrical and Electronic Material Technology, Department of Electrical and Computer Engineering, Democritous University of Thrace, Xanthi 67100, GreeceThe a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR−V) and reverse voltage-temperature (V-T) characteristics, as well as its reverse current temperature dependence. The IR−V characteristics exhibit an almost constant current, whereas the reverse current IR depends strongly on T (from 230 K up to 320K). The V-T characteristics, at different reverse currents, reveal a highly temperature sensitive behavior for the a-SiC/c-Si(n) junction. The measured values of temperature sensitivity (Δ V/ΔT)max was found to be (≅−2.5 V/K) in the moderate temperature range, which are much higher than those obtained with bulk semiconductor temperature sensors. The high sensitivity-temperature- range of the a-SiC/c-Si(n) heterojunctions can be controlled electrically within the regim of values from 230 K up to 320 K. Finally, the high sensitivity of these devices, in conjunction with the fact that a-SiC films can be used as an add-on to the existing Si technology, emerge new possibilities to the fabrication of high sensitivity temperature microsensors.http://dx.doi.org/10.1155/1998/71503Heterojunctiontemperature sensorsmicroelectronic devices. |
| spellingShingle | L. Magafas N. Georgoulas A. Thanailakis The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor Active and Passive Electronic Components Heterojunction temperature sensors microelectronic devices. |
| title | The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor |
| title_full | The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor |
| title_fullStr | The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor |
| title_full_unstemmed | The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor |
| title_short | The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor |
| title_sort | a sic c si n isotype heterojunction as a high sensitivity temperature sensor |
| topic | Heterojunction temperature sensors microelectronic devices. |
| url | http://dx.doi.org/10.1155/1998/71503 |
| work_keys_str_mv | AT lmagafas theasiccsinisotypeheterojunctionasahighsensitivitytemperaturesensor AT ngeorgoulas theasiccsinisotypeheterojunctionasahighsensitivitytemperaturesensor AT athanailakis theasiccsinisotypeheterojunctionasahighsensitivitytemperaturesensor AT lmagafas asiccsinisotypeheterojunctionasahighsensitivitytemperaturesensor AT ngeorgoulas asiccsinisotypeheterojunctionasahighsensitivitytemperaturesensor AT athanailakis asiccsinisotypeheterojunctionasahighsensitivitytemperaturesensor |