Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect
This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi-saturation region is significant factor of device linearity. The peak electric field is the root cause of electron...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2019/8425198 |
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