Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect
This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi-saturation region is significant factor of device linearity. The peak electric field is the root cause of electron...
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| Format: | Article |
| Language: | English |
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Wiley
2019-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2019/8425198 |
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| _version_ | 1850159788410798080 |
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| author | Haifeng Mo Yaohui Zhang Helun Song |
| author_facet | Haifeng Mo Yaohui Zhang Helun Song |
| author_sort | Haifeng Mo |
| collection | DOAJ |
| description | This paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi-saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation. The high electric field at the drift region near the drain will cause more electron-hole pairs generated to trigger the parasitic NPN transistor turn-on, which may cause failure of device. Devices with different drift region doping are simulated with TCAD and measured. With LDD4 doping, the peak electric field in the drift region is reduced; the linear region of the transconductance is broadened. The adjacent channel power ratio is decreased by 2 dBc; 12% more power can be discharged before the NPN transistor turn-on, indicating a better linearity and robustness. |
| format | Article |
| id | doaj-art-b5604adb087b424abfeeb10c4f246471 |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-b5604adb087b424abfeeb10c4f2464712025-08-20T02:23:24ZengWileyActive and Passive Electronic Components0882-75161563-50312019-01-01201910.1155/2019/84251988425198Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation EffectHaifeng Mo0Yaohui Zhang1Helun Song2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, ChinaThis paper discusses linearity and robustness together for the first time, disclosing a way to improve them. It reveals that the nonlinear transconductance with device working at quasi-saturation region is significant factor of device linearity. The peak electric field is the root cause of electron velocity saturation. The high electric field at the drift region near the drain will cause more electron-hole pairs generated to trigger the parasitic NPN transistor turn-on, which may cause failure of device. Devices with different drift region doping are simulated with TCAD and measured. With LDD4 doping, the peak electric field in the drift region is reduced; the linear region of the transconductance is broadened. The adjacent channel power ratio is decreased by 2 dBc; 12% more power can be discharged before the NPN transistor turn-on, indicating a better linearity and robustness.http://dx.doi.org/10.1155/2019/8425198 |
| spellingShingle | Haifeng Mo Yaohui Zhang Helun Song Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect Active and Passive Electronic Components |
| title | Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect |
| title_full | Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect |
| title_fullStr | Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect |
| title_full_unstemmed | Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect |
| title_short | Improving Linearity and Robustness of RF LDMOS by Mitigating Quasi-Saturation Effect |
| title_sort | improving linearity and robustness of rf ldmos by mitigating quasi saturation effect |
| url | http://dx.doi.org/10.1155/2019/8425198 |
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