Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS

Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS

This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and geometries to generate a comprehensive overview of LFN in this t...

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Bibliographic Details
Main Authors: Gerd Kiene, Sadik Ilik, Luigi Mastrodomenico, Masoud Babaie, Fabio Sebastiano
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Low frequency noise
1/f noise
flicker noise
cryogenic electronics
Cryo-CMOS
quantum computing
Online Access:https://ieeexplore.ieee.org/document/10606256/
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