Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS
This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and geometries to generate a comprehensive overview of LFN in this t...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10606256/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832583251063996416 |
|---|---|
| author | Gerd Kiene Sadik Ilik Luigi Mastrodomenico Masoud Babaie Fabio Sebastiano |
| author_facet | Gerd Kiene Sadik Ilik Luigi Mastrodomenico Masoud Babaie Fabio Sebastiano |
| author_sort | Gerd Kiene |
| collection | DOAJ |
| description | This paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and geometries to generate a comprehensive overview of LFN in this technology. While the RT results are in-line with the literature and the foundry models, the cryogenic behavior diverges in many aspects. These deviations include changes with respect to RT in magnitude and bias dependence that are conditional on transistor type and geometry, and even an additional systematic Lorentzian feature that is common among individual devices. Furthermore, we find the scaling of the average LFN with the area and its variability to be similar between RT and 4.2K, with the cryogenic scaling reported systematically for the first time. The findings suggest that, as no consistent decrease of LFN at lower temperatures is observed while the white noise is reduced, the impact of LFN for precision analog design at cryogenic temperatures gains a more predominant role. |
| format | Article |
| id | doaj-art-b4fd5fdbd1fb42b08a36c5ff6d9b2f2e |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-b4fd5fdbd1fb42b08a36c5ff6d9b2f2e2025-01-29T00:00:14ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011257358010.1109/JEDS.2024.343228310606256Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOSGerd Kiene0https://orcid.org/0000-0002-2924-2033Sadik Ilik1https://orcid.org/0000-0002-5647-7188Luigi Mastrodomenico2https://orcid.org/0009-0002-5897-7423Masoud Babaie3https://orcid.org/0000-0001-7635-5324Fabio Sebastiano4https://orcid.org/0000-0002-8489-9409Department of Quantum and Computer Engineering, Delft University of Technology, Delft, The GravendeelDepartment of Quantum and Computer Engineering, Delft University of Technology, Delft, The GravendeelDepartment of Quantum and Computer Engineering, Delft University of Technology, Delft, The GravendeelQutech, Delft, The NetherlandsDepartment of Quantum and Computer Engineering, Delft University of Technology, Delft, The GravendeelThis paper presents an extensive characterization of the low-frequency noise (LFN) at room temperature (RT) and cryogenic temperature (4.2K) of 40-nm bulk-CMOS transistors. The noise is measured over a wide range of bias conditions and geometries to generate a comprehensive overview of LFN in this technology. While the RT results are in-line with the literature and the foundry models, the cryogenic behavior diverges in many aspects. These deviations include changes with respect to RT in magnitude and bias dependence that are conditional on transistor type and geometry, and even an additional systematic Lorentzian feature that is common among individual devices. Furthermore, we find the scaling of the average LFN with the area and its variability to be similar between RT and 4.2K, with the cryogenic scaling reported systematically for the first time. The findings suggest that, as no consistent decrease of LFN at lower temperatures is observed while the white noise is reduced, the impact of LFN for precision analog design at cryogenic temperatures gains a more predominant role.https://ieeexplore.ieee.org/document/10606256/Low frequency noise1/f noiseflicker noisecryogenic electronicsCryo-CMOSquantum computing |
| spellingShingle | Gerd Kiene Sadik Ilik Luigi Mastrodomenico Masoud Babaie Fabio Sebastiano Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS IEEE Journal of the Electron Devices Society Low frequency noise 1/f noise flicker noise cryogenic electronics Cryo-CMOS quantum computing |
| title | Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS |
| title_full | Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS |
| title_fullStr | Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS |
| title_full_unstemmed | Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS |
| title_short | Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS |
| title_sort | cryogenic characterization of low frequency noise in 40 nm cmos |
| topic | Low frequency noise 1/f noise flicker noise cryogenic electronics Cryo-CMOS quantum computing |
| url | https://ieeexplore.ieee.org/document/10606256/ |
| work_keys_str_mv | AT gerdkiene cryogeniccharacterizationoflowfrequencynoisein40nmcmos AT sadikilik cryogeniccharacterizationoflowfrequencynoisein40nmcmos AT luigimastrodomenico cryogeniccharacterizationoflowfrequencynoisein40nmcmos AT masoudbabaie cryogeniccharacterizationoflowfrequencynoisein40nmcmos AT fabiosebastiano cryogeniccharacterizationoflowfrequencynoisein40nmcmos |