Small-Signal Analysis of High-Performance VCSELs

In this paper, a comprehensive model to describe the small-signal modulation response of ultra-high performance single- and multi-mode vertical-cavity surface-emitting lasers (VCSELs), with modulation bandwidths exceeding 30 GHz, is presented. Traditionally, utmost simplified dynamic mode...

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Main Authors: Wissam Hamad, Marwan Bou Sanayeh, Tobias Siepelmeyer, Hassan Hamad, Werner H. E. Hofmann
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Photonics Journal
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Online Access:https://ieeexplore.ieee.org/document/8653340/
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_version_ 1849422969797869568
author Wissam Hamad
Marwan Bou Sanayeh
Tobias Siepelmeyer
Hassan Hamad
Werner H. E. Hofmann
author_facet Wissam Hamad
Marwan Bou Sanayeh
Tobias Siepelmeyer
Hassan Hamad
Werner H. E. Hofmann
author_sort Wissam Hamad
collection DOAJ
description In this paper, a comprehensive model to describe the small-signal modulation response of ultra-high performance single- and multi-mode vertical-cavity surface-emitting lasers (VCSELs), with modulation bandwidths exceeding 30 GHz, is presented. Traditionally, utmost simplified dynamic models are used to extract dynamic figures of merit from single-mode edge-emitting lasers. These methods are later on also applied to evaluate the dynamic performance of VCSELs, even though these devices have a very different geometrical layout and modal confinement. However, to understand the dynamic performance of high-speed VCSELs, a model supporting the transverse and longitudinal mode profile, and the driving current inhomogeneity in the active region, is needed. Therefore, multi-mode VCSEL rate equations are established here. Moreover, to access the dynamic figures of merit of these devices, a comprehensive analytical fitting function based on our carrier reservoir splitting approach is derived. Thus, because of the high carrier and photon densities inside these optimized VCSELs, the common carrier reservoir splits up as a result of numerous effects such as mode competition, carrier diffusion and spatial hole burning. These and other effects have a tremendous impact on the small signal modulation response shape and bandwidth, and also on the current distribution profile in the carrier reservoirs. Compared with our recently reported work, this novel model presented includes the effects of gain compression and inhomogeneous current injection between the different lasing modes. Consequently, it is found that the further tuning of our multi-mode VCSEL dynamic model, to include these effects, yields a more physical and consistent figures of merit of high-performance VCSELs.
format Article
id doaj-art-b4b2017efcec499b96f59b9f5d6c91a9
institution Kabale University
issn 1943-0655
language English
publishDate 2019-01-01
publisher IEEE
record_format Article
series IEEE Photonics Journal
spelling doaj-art-b4b2017efcec499b96f59b9f5d6c91a92025-08-20T03:30:51ZengIEEEIEEE Photonics Journal1943-06552019-01-0111211210.1109/JPHOT.2019.29017228653340Small-Signal Analysis of High-Performance VCSELsWissam Hamad0https://orcid.org/0000-0002-1806-0568Marwan Bou Sanayeh1Tobias Siepelmeyer2Hassan Hamad3Werner H. E. Hofmann4https://orcid.org/0000-0002-2241-5122Technische Universität Berlin, Institute of Solid State Physics and Center of Nanophotonics, Berlin, GermanyECCE Department, Faculty of Engineering, Notre Dame University-Louaize, Zouk Mikael, LebanonTechnische Universität Berlin, Institute of Solid State Physics and Center of Nanophotonics, Berlin, GermanyECCE Department, Faculty of Engineering, Notre Dame University-Louaize, Zouk Mikael, LebanonTechnische Universität Berlin, Institute of Solid State Physics and Center of Nanophotonics, Berlin, GermanyIn this paper, a comprehensive model to describe the small-signal modulation response of ultra-high performance single- and multi-mode vertical-cavity surface-emitting lasers (VCSELs), with modulation bandwidths exceeding 30 GHz, is presented. Traditionally, utmost simplified dynamic models are used to extract dynamic figures of merit from single-mode edge-emitting lasers. These methods are later on also applied to evaluate the dynamic performance of VCSELs, even though these devices have a very different geometrical layout and modal confinement. However, to understand the dynamic performance of high-speed VCSELs, a model supporting the transverse and longitudinal mode profile, and the driving current inhomogeneity in the active region, is needed. Therefore, multi-mode VCSEL rate equations are established here. Moreover, to access the dynamic figures of merit of these devices, a comprehensive analytical fitting function based on our carrier reservoir splitting approach is derived. Thus, because of the high carrier and photon densities inside these optimized VCSELs, the common carrier reservoir splits up as a result of numerous effects such as mode competition, carrier diffusion and spatial hole burning. These and other effects have a tremendous impact on the small signal modulation response shape and bandwidth, and also on the current distribution profile in the carrier reservoirs. Compared with our recently reported work, this novel model presented includes the effects of gain compression and inhomogeneous current injection between the different lasing modes. Consequently, it is found that the further tuning of our multi-mode VCSEL dynamic model, to include these effects, yields a more physical and consistent figures of merit of high-performance VCSELs.https://ieeexplore.ieee.org/document/8653340/Carrier reservoir splittinginhomogeneous current injectionmulti-mode rate equationsmode competitionsmall-signal-modulation responseultra-high performance VCSELs
spellingShingle Wissam Hamad
Marwan Bou Sanayeh
Tobias Siepelmeyer
Hassan Hamad
Werner H. E. Hofmann
Small-Signal Analysis of High-Performance VCSELs
IEEE Photonics Journal
Carrier reservoir splitting
inhomogeneous current injection
multi-mode rate equations
mode competition
small-signal-modulation response
ultra-high performance VCSELs
title Small-Signal Analysis of High-Performance VCSELs
title_full Small-Signal Analysis of High-Performance VCSELs
title_fullStr Small-Signal Analysis of High-Performance VCSELs
title_full_unstemmed Small-Signal Analysis of High-Performance VCSELs
title_short Small-Signal Analysis of High-Performance VCSELs
title_sort small signal analysis of high performance vcsels
topic Carrier reservoir splitting
inhomogeneous current injection
multi-mode rate equations
mode competition
small-signal-modulation response
ultra-high performance VCSELs
url https://ieeexplore.ieee.org/document/8653340/
work_keys_str_mv AT wissamhamad smallsignalanalysisofhighperformancevcsels
AT marwanbousanayeh smallsignalanalysisofhighperformancevcsels
AT tobiassiepelmeyer smallsignalanalysisofhighperformancevcsels
AT hassanhamad smallsignalanalysisofhighperformancevcsels
AT wernerhehofmann smallsignalanalysisofhighperformancevcsels