Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure
Abstract Atomically thin transition metal dichalcogenides (TMDs) heterostructures provide a rich platform for exploring fascinating physics and engineering strategies. A pressure strategy is developed to effectively manipulate the physical properties in such heterostructures. However, there is still...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-02-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400333 |
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| author | Zhiying Bai He Zhang Jiaqi He Dawei He Jiarong Wang Wenwen Wu Yinglin Zhang Wenjie Wang Yongsheng Wang Xiaohui Yu Xiaoxian Zhang |
| author_facet | Zhiying Bai He Zhang Jiaqi He Dawei He Jiarong Wang Wenwen Wu Yinglin Zhang Wenjie Wang Yongsheng Wang Xiaohui Yu Xiaoxian Zhang |
| author_sort | Zhiying Bai |
| collection | DOAJ |
| description | Abstract Atomically thin transition metal dichalcogenides (TMDs) heterostructures provide a rich platform for exploring fascinating physics and engineering strategies. A pressure strategy is developed to effectively manipulate the physical properties in such heterostructures. However, there is still a lack of studies on the corresponding pressure‐modulated evolution of carrier dynamics, which is crucial to the performance of electronic and optoelectronic devices. Here, utilizing the diamond anvil cell, the interlayer exciton dynamics of WS2/MoSe2 heterostructure are subtly manipulated by pressure. Intriguingly, with pressure modulation, the enhanced interlayer coupling accelerates the recombination of spatially separated electron and hole, which significantly shortens the interlayer exciton lifetime from 37.10 ps at 0.0 Gpa to 3.03 ps at 2.2 Gpa. For comparison, the intralayer exciton lifetime of monolayer MoSe2 is increased due to the transition of direct to indirect bandgap under pressure. Furthermore, the pressure‐regulated band structure and interlayer coupling are confirmed by photoluminescence and Raman spectroscopy. The results demonstrate that pressure provides a powerful tuning knob for interlayer exciton relaxation of TMDs heterostructure, which is attractive to various electronic and optoelectronic applications based on such heterostructure. |
| format | Article |
| id | doaj-art-b4699f422d6142c98bf9e3cdfe4fdddc |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-b4699f422d6142c98bf9e3cdfe4fdddc2025-08-20T03:12:20ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-02-01112n/an/a10.1002/aelm.202400333Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under PressureZhiying Bai0He Zhang1Jiaqi He2Dawei He3Jiarong Wang4Wenwen Wu5Yinglin Zhang6Wenjie Wang7Yongsheng Wang8Xiaohui Yu9Xiaoxian Zhang10Key Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaCollege of Mathematics and Physics Beijing University of Chemical Technology Beijing 100029 ChinaKey Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 ChinaKey Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 ChinaKey Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 ChinaKey Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 ChinaKey Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 ChinaKey Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 ChinaBeijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 ChinaKey Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 ChinaAbstract Atomically thin transition metal dichalcogenides (TMDs) heterostructures provide a rich platform for exploring fascinating physics and engineering strategies. A pressure strategy is developed to effectively manipulate the physical properties in such heterostructures. However, there is still a lack of studies on the corresponding pressure‐modulated evolution of carrier dynamics, which is crucial to the performance of electronic and optoelectronic devices. Here, utilizing the diamond anvil cell, the interlayer exciton dynamics of WS2/MoSe2 heterostructure are subtly manipulated by pressure. Intriguingly, with pressure modulation, the enhanced interlayer coupling accelerates the recombination of spatially separated electron and hole, which significantly shortens the interlayer exciton lifetime from 37.10 ps at 0.0 Gpa to 3.03 ps at 2.2 Gpa. For comparison, the intralayer exciton lifetime of monolayer MoSe2 is increased due to the transition of direct to indirect bandgap under pressure. Furthermore, the pressure‐regulated band structure and interlayer coupling are confirmed by photoluminescence and Raman spectroscopy. The results demonstrate that pressure provides a powerful tuning knob for interlayer exciton relaxation of TMDs heterostructure, which is attractive to various electronic and optoelectronic applications based on such heterostructure.https://doi.org/10.1002/aelm.202400333exciton dynamicsinterlayer couplingpressure engineeringTMD heterostructure |
| spellingShingle | Zhiying Bai He Zhang Jiaqi He Dawei He Jiarong Wang Wenwen Wu Yinglin Zhang Wenjie Wang Yongsheng Wang Xiaohui Yu Xiaoxian Zhang Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure Advanced Electronic Materials exciton dynamics interlayer coupling pressure engineering TMD heterostructure |
| title | Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure |
| title_full | Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure |
| title_fullStr | Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure |
| title_full_unstemmed | Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure |
| title_short | Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure |
| title_sort | ultrafast decay of interlayer exciton in ws2 mose2 heterostructure under pressure |
| topic | exciton dynamics interlayer coupling pressure engineering TMD heterostructure |
| url | https://doi.org/10.1002/aelm.202400333 |
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