Increasing Single-Mode Power in VCSELs With Antiresonant Oxide Island
This article focuses on increasing the single-mode power in Vertical Cavity Surface Emitting Lasers (VCSELs) through the strategic integration of an antiresonant oxide islands. Using a gallium arsenide-based VCSEL as a case study, we explore the influence of oxide island parameters on lateral mode d...
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IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10475365/ |
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| author | Marta Wieckowska Maciej Dems |
| author_facet | Marta Wieckowska Maciej Dems |
| author_sort | Marta Wieckowska |
| collection | DOAJ |
| description | This article focuses on increasing the single-mode power in Vertical Cavity Surface Emitting Lasers (VCSELs) through the strategic integration of an antiresonant oxide islands. Using a gallium arsenide-based VCSEL as a case study, we explore the influence of oxide island parameters on lateral mode discrimination in term of threshold currents and emitted powers. The analysis confirms non-uniform variations in threshold currents, with varying oxide island position and size. Leveraging the spatial hole burning effect, we compute the output power and identify optimal island configurations for maximizing single-mode power. The results showcase the efficacy of antiresonant oxide islands in significantly enhancing single-mode power output in VCSELs. |
| format | Article |
| id | doaj-art-b43c75b1fc214d999fd39462afcdcf94 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-b43c75b1fc214d999fd39462afcdcf942025-08-20T03:32:57ZengIEEEIEEE Photonics Journal1943-06552024-01-011631710.1109/JPHOT.2024.337923410475365Increasing Single-Mode Power in VCSELs With Antiresonant Oxide IslandMarta Wieckowska0https://orcid.org/0000-0002-2654-5434Maciej Dems1https://orcid.org/0000-0002-5576-1021Institute of Physics, Lodz University of Technology, Lódź, PolandInstitute of Physics, Lodz University of Technology, Lódź, PolandThis article focuses on increasing the single-mode power in Vertical Cavity Surface Emitting Lasers (VCSELs) through the strategic integration of an antiresonant oxide islands. Using a gallium arsenide-based VCSEL as a case study, we explore the influence of oxide island parameters on lateral mode discrimination in term of threshold currents and emitted powers. The analysis confirms non-uniform variations in threshold currents, with varying oxide island position and size. Leveraging the spatial hole burning effect, we compute the output power and identify optimal island configurations for maximizing single-mode power. The results showcase the efficacy of antiresonant oxide islands in significantly enhancing single-mode power output in VCSELs.https://ieeexplore.ieee.org/document/10475365/VCSELARROWoxidationantiresonancewaveguidingoptical modeling |
| spellingShingle | Marta Wieckowska Maciej Dems Increasing Single-Mode Power in VCSELs With Antiresonant Oxide Island IEEE Photonics Journal VCSEL ARROW oxidation antiresonance waveguiding optical modeling |
| title | Increasing Single-Mode Power in VCSELs With Antiresonant Oxide Island |
| title_full | Increasing Single-Mode Power in VCSELs With Antiresonant Oxide Island |
| title_fullStr | Increasing Single-Mode Power in VCSELs With Antiresonant Oxide Island |
| title_full_unstemmed | Increasing Single-Mode Power in VCSELs With Antiresonant Oxide Island |
| title_short | Increasing Single-Mode Power in VCSELs With Antiresonant Oxide Island |
| title_sort | increasing single mode power in vcsels with antiresonant oxide island |
| topic | VCSEL ARROW oxidation antiresonance waveguiding optical modeling |
| url | https://ieeexplore.ieee.org/document/10475365/ |
| work_keys_str_mv | AT martawieckowska increasingsinglemodepowerinvcselswithantiresonantoxideisland AT maciejdems increasingsinglemodepowerinvcselswithantiresonantoxideisland |