Influence of Electron Irradiation on Optical Properties of ZnSe Thin Films
Zinc Selenide (ZnSe) thin films of 500 nm thickness were deposited by electron beam evaporation technique and irradiated with 8 MeV electron beam for the doses ranging from 0 Gy to 1 kGy. Optical properties were studied for both irradiated and pristine samples using Ultraviolet-Visible spectrophotom...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2014-11-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2014/4/articles/jnep_2014_V6_04007.pdf |
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| Summary: | Zinc Selenide (ZnSe) thin films of 500 nm thickness were deposited by electron beam evaporation technique and irradiated with 8 MeV electron beam for the doses ranging from 0 Gy to 1 kGy. Optical properties were studied for both irradiated and pristine samples using Ultraviolet-Visible spectrophotometer. The increase in electron dose tends to decrease in transmittance and increase in refractive index of thin film. Irradiated thin film exhibits minimum of 67 % transmittance for 800 Gy with very high absorption of optical energy at 550 nm wavelength. The samples irradiated > 800 Gy tends to redeem the pristine properties. Optical band gap for irradiated thin film were direct and in the range of 2.66 – 2.69 eV. |
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| ISSN: | 2077-6772 |