Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation
The paper describes the effect of doping with hydrogen and tungsten by means of plasma-immersion ion implantation (PIII) on the properties of vanadium dioxide and hydrated vanadium pentoxide films. It is shown that the parameters of the metal-insulator phase transition in VO2 thin films depend on th...
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| Format: | Article |
| Language: | English |
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Wiley
2018-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2018/9789370 |
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| author | Sergey Burdyukh Olga Berezina Alexander Pergament |
| author_facet | Sergey Burdyukh Olga Berezina Alexander Pergament |
| author_sort | Sergey Burdyukh |
| collection | DOAJ |
| description | The paper describes the effect of doping with hydrogen and tungsten by means of plasma-immersion ion implantation (PIII) on the properties of vanadium dioxide and hydrated vanadium pentoxide films. It is shown that the parameters of the metal-insulator phase transition in VO2 thin films depend on the hydrogen implantation dose. Next, we explore the effect of PIII on composition, optical properties, and the internal electrochromic effect (IECE) in V2O5·nH2O films. The variations in the composition and structure caused by the hydrogen insertion, as well as those caused by the electrochromic effect, are studied by nuclear magnetic resonance, thermogravimetry, Raman spectroscopy, and X-ray structural analysis. It is shown that the ion implantation-induced hydrogenation can substantially enhance the manifestation and performance of the IECE in V2O5 xerogel films. Finally, the effect of PIII-assisted doping with W on the parameters of electrical switching in Au/V2O5·nH2O/Au sandwich structures is examined. It is shown that implanting small tungsten doses improves the switching parameters after forming. When implanting large doses, switching is observed without electroforming, and if electroforming is applied, the switching effect, on the contrary, disappears. |
| format | Article |
| id | doaj-art-b4227577baad4d7dabb7587c553a0d38 |
| institution | DOAJ |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-b4227577baad4d7dabb7587c553a0d382025-08-20T03:20:52ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242018-01-01201810.1155/2018/97893709789370Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion ImplantationSergey Burdyukh0Olga Berezina1Alexander Pergament2Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, RussiaInstitute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, RussiaInstitute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, RussiaThe paper describes the effect of doping with hydrogen and tungsten by means of plasma-immersion ion implantation (PIII) on the properties of vanadium dioxide and hydrated vanadium pentoxide films. It is shown that the parameters of the metal-insulator phase transition in VO2 thin films depend on the hydrogen implantation dose. Next, we explore the effect of PIII on composition, optical properties, and the internal electrochromic effect (IECE) in V2O5·nH2O films. The variations in the composition and structure caused by the hydrogen insertion, as well as those caused by the electrochromic effect, are studied by nuclear magnetic resonance, thermogravimetry, Raman spectroscopy, and X-ray structural analysis. It is shown that the ion implantation-induced hydrogenation can substantially enhance the manifestation and performance of the IECE in V2O5 xerogel films. Finally, the effect of PIII-assisted doping with W on the parameters of electrical switching in Au/V2O5·nH2O/Au sandwich structures is examined. It is shown that implanting small tungsten doses improves the switching parameters after forming. When implanting large doses, switching is observed without electroforming, and if electroforming is applied, the switching effect, on the contrary, disappears.http://dx.doi.org/10.1155/2018/9789370 |
| spellingShingle | Sergey Burdyukh Olga Berezina Alexander Pergament Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation Advances in Condensed Matter Physics |
| title | Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation |
| title_full | Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation |
| title_fullStr | Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation |
| title_full_unstemmed | Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation |
| title_short | Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation |
| title_sort | modification of the properties of vanadium oxide thin films by plasma immersion ion implantation |
| url | http://dx.doi.org/10.1155/2018/9789370 |
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