High-Isolation CMOS T/R Switch Design Using a Two-Stage Equivalent Transmission Line Structure
A fully integrated Ku-band transmit/receive (T/R) switch based on a two-stage equivalent transmission line structure has been designed using a 180-nm complementary metal-oxide-semiconductor (CMOS) process. An analysis shows a relation between the series inductance and turn-on resistance for high iso...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8064630/ |
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