Giant orbital Hall effect due to the bulk states of 3D topological insulators

Abstract The highly efficient torques generated by 3D topological insulators make them a favourable platform for faster and more efficient magnetic memory devices. Recently, research into harnessing orbital angular momentum in orbital torques has received significant attention. Here we study the orb...

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Main Authors: James H. Cullen, Hong Liu, Dimitrie Culcer
Format: Article
Language:English
Published: Nature Portfolio 2025-06-01
Series:npj Spintronics
Online Access:https://doi.org/10.1038/s44306-025-00087-y
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author James H. Cullen
Hong Liu
Dimitrie Culcer
author_facet James H. Cullen
Hong Liu
Dimitrie Culcer
author_sort James H. Cullen
collection DOAJ
description Abstract The highly efficient torques generated by 3D topological insulators make them a favourable platform for faster and more efficient magnetic memory devices. Recently, research into harnessing orbital angular momentum in orbital torques has received significant attention. Here we study the orbital Hall effect in topological insulators. We find that the bulk states give rise to a sizeable orbital Hall effect that is up to 3 orders of magnitude larger than the spin Hall effect in topological insulators. This is partially because the orbital angular momentum that each conduction electron carries is up to an order of magnitude larger than the ℏ/2 carried by its spin. Our results imply that the large torques measured in topological insulator/ferromagnet devices can be further enhanced through careful engineering of the heterostructure to optimise orbital-to-spin conversion.
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issn 2948-2119
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publishDate 2025-06-01
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series npj Spintronics
spelling doaj-art-b40715eeba9b40fe906f59145a5436ca2025-08-20T02:31:03ZengNature Portfolionpj Spintronics2948-21192025-06-01311710.1038/s44306-025-00087-yGiant orbital Hall effect due to the bulk states of 3D topological insulatorsJames H. Cullen0Hong Liu1Dimitrie Culcer2School of Physics, The University of New South WalesSchool of Physics, The University of New South WalesSchool of Physics, The University of New South WalesAbstract The highly efficient torques generated by 3D topological insulators make them a favourable platform for faster and more efficient magnetic memory devices. Recently, research into harnessing orbital angular momentum in orbital torques has received significant attention. Here we study the orbital Hall effect in topological insulators. We find that the bulk states give rise to a sizeable orbital Hall effect that is up to 3 orders of magnitude larger than the spin Hall effect in topological insulators. This is partially because the orbital angular momentum that each conduction electron carries is up to an order of magnitude larger than the ℏ/2 carried by its spin. Our results imply that the large torques measured in topological insulator/ferromagnet devices can be further enhanced through careful engineering of the heterostructure to optimise orbital-to-spin conversion.https://doi.org/10.1038/s44306-025-00087-y
spellingShingle James H. Cullen
Hong Liu
Dimitrie Culcer
Giant orbital Hall effect due to the bulk states of 3D topological insulators
npj Spintronics
title Giant orbital Hall effect due to the bulk states of 3D topological insulators
title_full Giant orbital Hall effect due to the bulk states of 3D topological insulators
title_fullStr Giant orbital Hall effect due to the bulk states of 3D topological insulators
title_full_unstemmed Giant orbital Hall effect due to the bulk states of 3D topological insulators
title_short Giant orbital Hall effect due to the bulk states of 3D topological insulators
title_sort giant orbital hall effect due to the bulk states of 3d topological insulators
url https://doi.org/10.1038/s44306-025-00087-y
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AT hongliu giantorbitalhalleffectduetothebulkstatesof3dtopologicalinsulators
AT dimitrieculcer giantorbitalhalleffectduetothebulkstatesof3dtopologicalinsulators