Highly Stable Electronics Based on β‐Ga2O3 for Advanced Memory Applications
Abstract Wide‐bandgap (WBG) semiconductors are at the forefront of driving innovations in electronic technology, perpetuating Moore's Law and opening up new avenues for electronic devices. Although β‐Ga2O3 has attracted extensive research interest in advanced electronics, its high‐temperature a...
Saved in:
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-03-01
|
| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202413846 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849338492750921728 |
|---|---|
| author | Xiaoxi Li Yu‐Chun Li Yingguo Yang Bitao Dong Yuhang Liu Lina Li Linfeng Pan Gengsheng Chen Yue Hao Genquan Han |
| author_facet | Xiaoxi Li Yu‐Chun Li Yingguo Yang Bitao Dong Yuhang Liu Lina Li Linfeng Pan Gengsheng Chen Yue Hao Genquan Han |
| author_sort | Xiaoxi Li |
| collection | DOAJ |
| description | Abstract Wide‐bandgap (WBG) semiconductors are at the forefront of driving innovations in electronic technology, perpetuating Moore's Law and opening up new avenues for electronic devices. Although β‐Ga2O3 has attracted extensive research interest in advanced electronics, its high‐temperature and high‐speed volatile memory applications in harsh environment has been largely overlooked. Herein, a high‐performance hexagonal boron nitride (h‐BN)/β‐Ga2O3 heterostructure junction field‐effect transistor (HJFET) is fabricated, exhibiting an off‐state current as low as ≈10 fA, a high on/off current ratio of ≈108, a low contact resistance of 5.6 Ω·mm, and an impressive field‐effect electron mobility of 156 cm2 （Vs）−1. Notably, the current h‐BN/β‐Ga2O3 HJFET exhibits outstanding thermal reliability in the ultra‐wide temperature range from 223 to 573 K, as well as long‐term environmental stability in air, which confirms its inherent capability of operation in harsh environments. Moreover, the h‐BN/β‐Ga2O3 HJFET demonstrates successful applications for accelerator‐in‐memory computing fields, including dynamic random‐access memory structure and neural network computations. These superior characteristics position β‐Ga₂O₃‐based electronics as highly promising for applications in extreme environments, with particular relevance to the automotive, aerospace, and sensor sectors. |
| format | Article |
| id | doaj-art-b3cb9487822244319af78c6f4fb5e5ea |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-b3cb9487822244319af78c6f4fb5e5ea2025-08-20T03:44:23ZengWileyAdvanced Science2198-38442025-03-011212n/an/a10.1002/advs.202413846Highly Stable Electronics Based on β‐Ga2O3 for Advanced Memory ApplicationsXiaoxi Li0Yu‐Chun Li1Yingguo Yang2Bitao Dong3Yuhang Liu4Lina Li5Linfeng Pan6Gengsheng Chen7Yue Hao8Genquan Han9Hangzhou Institute of Technology Xidian University Hangzhou 311200 ChinaState Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai 200433 ChinaState Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai 200433 ChinaState Key Laboratory for Mechanical Behavior of Materials School of Materials Science and Engineering Xi'an Jiaotong University Xi'an 710049 ChinaState Key Laboratory for Mechanical Behavior of Materials School of Materials Science and Engineering Xi'an Jiaotong University Xi'an 710049 ChinaShanghai Synchrotron Radiation Facility (SSRF) Zhangjiang Lab Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai 201204 ChinaDepartment of Chemical Engineering and Biotechnology University of Cambridge Cambridge CB2 1TN UKState Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai 200433 ChinaHangzhou Institute of Technology Xidian University Hangzhou 311200 ChinaHangzhou Institute of Technology Xidian University Hangzhou 311200 ChinaAbstract Wide‐bandgap (WBG) semiconductors are at the forefront of driving innovations in electronic technology, perpetuating Moore's Law and opening up new avenues for electronic devices. Although β‐Ga2O3 has attracted extensive research interest in advanced electronics, its high‐temperature and high‐speed volatile memory applications in harsh environment has been largely overlooked. Herein, a high‐performance hexagonal boron nitride (h‐BN)/β‐Ga2O3 heterostructure junction field‐effect transistor (HJFET) is fabricated, exhibiting an off‐state current as low as ≈10 fA, a high on/off current ratio of ≈108, a low contact resistance of 5.6 Ω·mm, and an impressive field‐effect electron mobility of 156 cm2 （Vs）−1. Notably, the current h‐BN/β‐Ga2O3 HJFET exhibits outstanding thermal reliability in the ultra‐wide temperature range from 223 to 573 K, as well as long‐term environmental stability in air, which confirms its inherent capability of operation in harsh environments. Moreover, the h‐BN/β‐Ga2O3 HJFET demonstrates successful applications for accelerator‐in‐memory computing fields, including dynamic random‐access memory structure and neural network computations. These superior characteristics position β‐Ga₂O₃‐based electronics as highly promising for applications in extreme environments, with particular relevance to the automotive, aerospace, and sensor sectors.https://doi.org/10.1002/advs.202413846dynamic random‐access memorystabilitywide‐bandgap semiconductorsβ‐Ga2O3/h‐BN heterostructure |
| spellingShingle | Xiaoxi Li Yu‐Chun Li Yingguo Yang Bitao Dong Yuhang Liu Lina Li Linfeng Pan Gengsheng Chen Yue Hao Genquan Han Highly Stable Electronics Based on β‐Ga2O3 for Advanced Memory Applications Advanced Science dynamic random‐access memory stability wide‐bandgap semiconductors β‐Ga2O3/h‐BN heterostructure |
| title | Highly Stable Electronics Based on β‐Ga2O3 for Advanced Memory Applications |
| title_full | Highly Stable Electronics Based on β‐Ga2O3 for Advanced Memory Applications |
| title_fullStr | Highly Stable Electronics Based on β‐Ga2O3 for Advanced Memory Applications |
| title_full_unstemmed | Highly Stable Electronics Based on β‐Ga2O3 for Advanced Memory Applications |
| title_short | Highly Stable Electronics Based on β‐Ga2O3 for Advanced Memory Applications |
| title_sort | highly stable electronics based on β ga2o3 for advanced memory applications |
| topic | dynamic random‐access memory stability wide‐bandgap semiconductors β‐Ga2O3/h‐BN heterostructure |
| url | https://doi.org/10.1002/advs.202413846 |
| work_keys_str_mv | AT xiaoxili highlystableelectronicsbasedonbga2o3foradvancedmemoryapplications AT yuchunli highlystableelectronicsbasedonbga2o3foradvancedmemoryapplications AT yingguoyang highlystableelectronicsbasedonbga2o3foradvancedmemoryapplications AT bitaodong highlystableelectronicsbasedonbga2o3foradvancedmemoryapplications AT yuhangliu highlystableelectronicsbasedonbga2o3foradvancedmemoryapplications AT linali highlystableelectronicsbasedonbga2o3foradvancedmemoryapplications AT linfengpan highlystableelectronicsbasedonbga2o3foradvancedmemoryapplications AT gengshengchen highlystableelectronicsbasedonbga2o3foradvancedmemoryapplications AT yuehao highlystableelectronicsbasedonbga2o3foradvancedmemoryapplications AT genquanhan highlystableelectronicsbasedonbga2o3foradvancedmemoryapplications |