Improving Performance of Germanium-Based Vertical Tunneling Field Effect Transistor Using GaAs as Channel
In this paper, Germanium-based vertical tunneling transistors are investigated and the electrical properties of the transistor in two modes of Germanium utilization as well as Gallium Arsenide as the channel are compared. The simulation of this transistor was performed by Silvaco software using non-...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | fas |
| Published: |
Semnan University
2024-04-01
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| Series: | مجله مدل سازی در مهندسی |
| Subjects: | |
| Online Access: | https://modelling.semnan.ac.ir/article_8350_d46e66d8034b8de9256d9ea881125293.pdf |
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