Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors
Abstract Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional complementary metal-oxide-semiconductor technology by reducing the number of components needed to construct functional circuits. Prior work required continuous voltage applica...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-08-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-62827-2 |
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| author | Dongjoon Rhee Kwan-Ho Kim Jeffrey Zheng Seunguk Song Lian-Mao Peng Roy H. Olsson Joohoon Kang Deep Jariwala |
| author_facet | Dongjoon Rhee Kwan-Ho Kim Jeffrey Zheng Seunguk Song Lian-Mao Peng Roy H. Olsson Joohoon Kang Deep Jariwala |
| author_sort | Dongjoon Rhee |
| collection | DOAJ |
| description | Abstract Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional complementary metal-oxide-semiconductor technology by reducing the number of components needed to construct functional circuits. Prior work required continuous voltage application to programming gate terminal(s) alongside the primary gate, undermining the advantages of reconfigurable devices in achieving compact and power-efficient integrated circuits. Here, we realize scalable reconfigurable devices based on single-gate field-effect transistors that integrate highly aligned single-walled carbon nanotube channels with a ferroelectric aluminum scandium nitride gate dielectric. The devices exhibit ambipolar characteristics with high, well-balanced on-state currents (~270 μA μm−1 at a drain voltage of 3 V) and on/off ratios exceeding 105, along with large memory windows and excellent retention behavior. Ferroelectric polarization switching also enables reconfiguration between p- and n-channel transistors, allowing ternary content-addressable memory to be realized with far fewer devices than circuits based on conventional silicon technology or alternative memory devices. |
| format | Article |
| id | doaj-art-b363ddc25e684883ba850ea15a427089 |
| institution | DOAJ |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-b363ddc25e684883ba850ea15a4270892025-08-20T03:07:27ZengNature PortfolioNature Communications2041-17232025-08-0116111210.1038/s41467-025-62827-2Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistorsDongjoon Rhee0Kwan-Ho Kim1Jeffrey Zheng2Seunguk Song3Lian-Mao Peng4Roy H. Olsson5Joohoon Kang6Deep Jariwala7Department of Electrical and Systems Engineering, University of PennsylvaniaDepartment of Electrical and Systems Engineering, University of PennsylvaniaDepartment of Materials Science and Engineering, University of PennsylvaniaDepartment of Electrical and Systems Engineering, University of PennsylvaniaCenter for Carbon-Based Electronics, School of Electronics, Peking UniversityDepartment of Electrical and Systems Engineering, University of PennsylvaniaDepartment of Chemical and Biomolecular Engineering, Yonsei UniversityDepartment of Electrical and Systems Engineering, University of PennsylvaniaAbstract Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional complementary metal-oxide-semiconductor technology by reducing the number of components needed to construct functional circuits. Prior work required continuous voltage application to programming gate terminal(s) alongside the primary gate, undermining the advantages of reconfigurable devices in achieving compact and power-efficient integrated circuits. Here, we realize scalable reconfigurable devices based on single-gate field-effect transistors that integrate highly aligned single-walled carbon nanotube channels with a ferroelectric aluminum scandium nitride gate dielectric. The devices exhibit ambipolar characteristics with high, well-balanced on-state currents (~270 μA μm−1 at a drain voltage of 3 V) and on/off ratios exceeding 105, along with large memory windows and excellent retention behavior. Ferroelectric polarization switching also enables reconfiguration between p- and n-channel transistors, allowing ternary content-addressable memory to be realized with far fewer devices than circuits based on conventional silicon technology or alternative memory devices.https://doi.org/10.1038/s41467-025-62827-2 |
| spellingShingle | Dongjoon Rhee Kwan-Ho Kim Jeffrey Zheng Seunguk Song Lian-Mao Peng Roy H. Olsson Joohoon Kang Deep Jariwala Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors Nature Communications |
| title | Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors |
| title_full | Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors |
| title_fullStr | Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors |
| title_full_unstemmed | Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors |
| title_short | Reconfigurable single-walled carbon nanotube ferroelectric field-effect transistors |
| title_sort | reconfigurable single walled carbon nanotube ferroelectric field effect transistors |
| url | https://doi.org/10.1038/s41467-025-62827-2 |
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