A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS

Abstract This work investigates a 5.5–7.5‐GHz band‐configurable duty‐cycled wake‐up receiver (WuRX) fully implemented in a 45‐nm radio‐frequency (RF) silicon‐on‐insulator (SOI) complementary‐metal‐oxide‐semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super‐heterody...

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Main Authors: Rui Ma, Florian Protze, Frank Ellinger
Format: Article
Language:English
Published: Wiley 2022-10-01
Series:IET Circuits, Devices and Systems
Online Access:https://doi.org/10.1049/cds2.12123
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_version_ 1832559647774474240
author Rui Ma
Florian Protze
Frank Ellinger
author_facet Rui Ma
Florian Protze
Frank Ellinger
author_sort Rui Ma
collection DOAJ
description Abstract This work investigates a 5.5–7.5‐GHz band‐configurable duty‐cycled wake‐up receiver (WuRX) fully implemented in a 45‐nm radio‐frequency (RF) silicon‐on‐insulator (SOI) complementary‐metal‐oxide‐semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super‐heterodyne receiver (RX) topology, the WuRX analogue front‐end (AFE) incorporates a 5.5–7.5‐GHz band‐tunable low‐power low‐noise amplifier, a low‐power Gilbert mixer, a digitally controlled oscillator (DCO), a 100‐MHz IF band‐pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. By application of duty cycling with a low duty cycle below 1%, the power consumption of the AFE was significantly reduced. In addition, the on‐chip digital bank‐end consists of a frequency divider, a phase corrector, a 31‐bit correlator and a serial peripheral interface. A proof‐of‐concept WuRX circuit occupying an area of 1200 μm by 900 μm has been fabricated in a GlobalFoundries 45‐nm RF‐SOI CMOS technology. Measurement results show that at a data rate of 64 bps, the entire WuRX consumes only 2.3 μW. Tested at 8 operation bands covering 5.5–7.7 GHz, the WuRX has a measured sensitivity between −67.5 dBm and −72.4 dBm at a wake‐up error rate of 10−3. With the sensitivity unchanged, the data rate of the WuRX can be scaled up to 8.2 kbps. To the authors' best knowledge, this work offers the largest RF bandwidth from 5.5 to 7.5 GHz, the most operation channels (≥8) and the fastest settling time (<115 ns) among the WuRXs reported to date.
format Article
id doaj-art-b32c4e345efa4bfdab3e73458d66b971
institution Kabale University
issn 1751-858X
1751-8598
language English
publishDate 2022-10-01
publisher Wiley
record_format Article
series IET Circuits, Devices and Systems
spelling doaj-art-b32c4e345efa4bfdab3e73458d66b9712025-02-03T01:29:38ZengWileyIET Circuits, Devices and Systems1751-858X1751-85982022-10-0116752554210.1049/cds2.12123A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOSRui Ma0Florian Protze1Frank Ellinger2Chair for Circuit Design and Network Theory at the Technische Universität Dresden Dresden GermanyChair for Circuit Design and Network Theory at the Technische Universität Dresden Dresden GermanyChair for Circuit Design and Network Theory at the Technische Universität Dresden Dresden GermanyAbstract This work investigates a 5.5–7.5‐GHz band‐configurable duty‐cycled wake‐up receiver (WuRX) fully implemented in a 45‐nm radio‐frequency (RF) silicon‐on‐insulator (SOI) complementary‐metal‐oxide‐semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super‐heterodyne receiver (RX) topology, the WuRX analogue front‐end (AFE) incorporates a 5.5–7.5‐GHz band‐tunable low‐power low‐noise amplifier, a low‐power Gilbert mixer, a digitally controlled oscillator (DCO), a 100‐MHz IF band‐pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. By application of duty cycling with a low duty cycle below 1%, the power consumption of the AFE was significantly reduced. In addition, the on‐chip digital bank‐end consists of a frequency divider, a phase corrector, a 31‐bit correlator and a serial peripheral interface. A proof‐of‐concept WuRX circuit occupying an area of 1200 μm by 900 μm has been fabricated in a GlobalFoundries 45‐nm RF‐SOI CMOS technology. Measurement results show that at a data rate of 64 bps, the entire WuRX consumes only 2.3 μW. Tested at 8 operation bands covering 5.5–7.7 GHz, the WuRX has a measured sensitivity between −67.5 dBm and −72.4 dBm at a wake‐up error rate of 10−3. With the sensitivity unchanged, the data rate of the WuRX can be scaled up to 8.2 kbps. To the authors' best knowledge, this work offers the largest RF bandwidth from 5.5 to 7.5 GHz, the most operation channels (≥8) and the fastest settling time (<115 ns) among the WuRXs reported to date.https://doi.org/10.1049/cds2.12123
spellingShingle Rui Ma
Florian Protze
Frank Ellinger
A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS
IET Circuits, Devices and Systems
title A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS
title_full A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS
title_fullStr A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS
title_full_unstemmed A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS
title_short A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS
title_sort 5 5 7 5 ghz band configurable wake up receiver fully integrated in 45 nm rf soi cmos
url https://doi.org/10.1049/cds2.12123
work_keys_str_mv AT ruima a5575ghzbandconfigurablewakeupreceiverfullyintegratedin45nmrfsoicmos
AT florianprotze a5575ghzbandconfigurablewakeupreceiverfullyintegratedin45nmrfsoicmos
AT frankellinger a5575ghzbandconfigurablewakeupreceiverfullyintegratedin45nmrfsoicmos
AT ruima 5575ghzbandconfigurablewakeupreceiverfullyintegratedin45nmrfsoicmos
AT florianprotze 5575ghzbandconfigurablewakeupreceiverfullyintegratedin45nmrfsoicmos
AT frankellinger 5575ghzbandconfigurablewakeupreceiverfullyintegratedin45nmrfsoicmos