Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems
This study examines the reliability of several electronic components in a Vienna Rectifier configuration, which is a critical topology for power conversion systems. Component selection has become increasingly important over the past few years since the power electronics of today demand more efficien...
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| Format: | Article |
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IEEE
2025-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10817574/ |
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| author | Bharaneedharan Balasundaram P. Suresh Parvathy Rajendran It Ee Lee C. Ahamed Saleel |
| author_facet | Bharaneedharan Balasundaram P. Suresh Parvathy Rajendran It Ee Lee C. Ahamed Saleel |
| author_sort | Bharaneedharan Balasundaram |
| collection | DOAJ |
| description | This study examines the reliability of several electronic components in a Vienna Rectifier configuration, which is a critical topology for power conversion systems. Component selection has become increasingly important over the past few years since the power electronics of today demand more efficiency, power density, and operational reliability. Extreme reliability testing such as temperature cycling, electrical overload, and long duration of high-frequency operation was a part of the study. GaN MOSFETs had an edge over Si and SiC MOSFETs in several aspects, such as decreased conduction and switching losses, better thermal management, and more consistent performance with time. While GaN MOSFETs performed better in general and especially at high frequencies and temperatures, SiC MOSFETs showed some improvements over the conventional Si devices. Capacitors, diodes, MOSFETs, and inductors are put to test for reliability under different stress conditions. The combination of diodes and GaN MOSFETs showed a synergistic effect in improving system dependability and reducing temperature-induced degradation. This is a significant result. The combined effects allowed active and passive parts to last longer and function more reliably. These results open insights into selecting components for systems in the automotive and aerospace industries, which mostly rely on reliability. |
| format | Article |
| id | doaj-art-b225dc7d2b4046908670146ef7ffb2c1 |
| institution | Kabale University |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj-art-b225dc7d2b4046908670146ef7ffb2c12025-01-07T00:02:11ZengIEEEIEEE Access2169-35362025-01-01133072308910.1109/ACCESS.2024.352352810817574Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging SystemsBharaneedharan Balasundaram0https://orcid.org/0009-0001-9470-0643P. Suresh1https://orcid.org/0000-0001-6251-8102Parvathy Rajendran2https://orcid.org/0000-0002-7430-1389It Ee Lee3C. Ahamed Saleel4https://orcid.org/0000-0003-3705-4371Department of Electrical and Electronics Engineering, SRM Institute of Science and Technology, Kattankulathur, Chennai, IndiaDepartment of Electrical and Electronics Engineering, SRM Institute of Science and Technology, Kattankulathur, Chennai, IndiaSchool of Aerospace Engineering, Universiti Sains Malaysia, Engineering Campus, Nibong Tebal, Pulau Pinang, MalaysiaFaculty of Engineering, Multimedia University, Cyberjaya, Selangor, MalaysiaCentral Laboratories, King Khalid University, Abha, Saudi ArabiaThis study examines the reliability of several electronic components in a Vienna Rectifier configuration, which is a critical topology for power conversion systems. Component selection has become increasingly important over the past few years since the power electronics of today demand more efficiency, power density, and operational reliability. Extreme reliability testing such as temperature cycling, electrical overload, and long duration of high-frequency operation was a part of the study. GaN MOSFETs had an edge over Si and SiC MOSFETs in several aspects, such as decreased conduction and switching losses, better thermal management, and more consistent performance with time. While GaN MOSFETs performed better in general and especially at high frequencies and temperatures, SiC MOSFETs showed some improvements over the conventional Si devices. Capacitors, diodes, MOSFETs, and inductors are put to test for reliability under different stress conditions. The combination of diodes and GaN MOSFETs showed a synergistic effect in improving system dependability and reducing temperature-induced degradation. This is a significant result. The combined effects allowed active and passive parts to last longer and function more reliably. These results open insights into selecting components for systems in the automotive and aerospace industries, which mostly rely on reliability.https://ieeexplore.ieee.org/document/10817574/Electric vehiclesgallium nitride transistorssiliconsilicon carbideVienna rectifierwide bandgap |
| spellingShingle | Bharaneedharan Balasundaram P. Suresh Parvathy Rajendran It Ee Lee C. Ahamed Saleel Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems IEEE Access Electric vehicles gallium nitride transistors silicon silicon carbide Vienna rectifier wide bandgap |
| title | Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems |
| title_full | Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems |
| title_fullStr | Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems |
| title_full_unstemmed | Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems |
| title_short | Reliability Test on Vienna Rectifier for Wide Bandgap Devices in EV Charging Systems |
| title_sort | reliability test on vienna rectifier for wide bandgap devices in ev charging systems |
| topic | Electric vehicles gallium nitride transistors silicon silicon carbide Vienna rectifier wide bandgap |
| url | https://ieeexplore.ieee.org/document/10817574/ |
| work_keys_str_mv | AT bharaneedharanbalasundaram reliabilitytestonviennarectifierforwidebandgapdevicesinevchargingsystems AT psuresh reliabilitytestonviennarectifierforwidebandgapdevicesinevchargingsystems AT parvathyrajendran reliabilitytestonviennarectifierforwidebandgapdevicesinevchargingsystems AT iteelee reliabilitytestonviennarectifierforwidebandgapdevicesinevchargingsystems AT cahamedsaleel reliabilitytestonviennarectifierforwidebandgapdevicesinevchargingsystems |