Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams
In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-02-01
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| Series: | Optical Materials: X |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590147825000014 |
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| author | Zhanymgul Koishybayeva Fedor Konusov Sergey Pavlov Dmitrii Sidelev Artur Nassyrbayev Ruslan Gadyrov Vladislav Tarbokov Elena Polisadova Abdirash Akilbekov |
| author_facet | Zhanymgul Koishybayeva Fedor Konusov Sergey Pavlov Dmitrii Sidelev Artur Nassyrbayev Ruslan Gadyrov Vladislav Tarbokov Elena Polisadova Abdirash Akilbekov |
| author_sort | Zhanymgul Koishybayeva |
| collection | DOAJ |
| description | In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed. |
| format | Article |
| id | doaj-art-b20dce125b4b4fbf9bd93b4ef87d574d |
| institution | Kabale University |
| issn | 2590-1478 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Optical Materials: X |
| spelling | doaj-art-b20dce125b4b4fbf9bd93b4ef87d574d2025-02-08T05:01:05ZengElsevierOptical Materials: X2590-14782025-02-0125100399Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beamsZhanymgul Koishybayeva0Fedor Konusov1Sergey Pavlov2Dmitrii Sidelev3Artur Nassyrbayev4Ruslan Gadyrov5Vladislav Tarbokov6Elena Polisadova7Abdirash Akilbekov8L.N. Gumilyov Eurasian National University, 2 Satpayev Str., 010008, Astana, Kazakhstan; Corresponding author.National Research Tomsk Polytechnic University, 30 Lenina Ave., 634050, Tomsk, RussiaNational Research Tomsk Polytechnic University, 30 Lenina Ave., 634050, Tomsk, RussiaNational Research Tomsk Polytechnic University, 30 Lenina Ave., 634050, Tomsk, RussiaNational Research Tomsk Polytechnic University, 30 Lenina Ave., 634050, Tomsk, RussiaNational Research Tomsk State University, 36 Lenina Ave., 634050, Tomsk, RussiaNational Research Tomsk Polytechnic University, 30 Lenina Ave., 634050, Tomsk, RussiaNational Research Tomsk Polytechnic University, 30 Lenina Ave., 634050, Tomsk, RussiaL.N. Gumilyov Eurasian National University, 2 Satpayev Str., 010008, Astana, KazakhstanIn this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed.http://www.sciencedirect.com/science/article/pii/S2590147825000014Gallium oxideThin filmsMagnetron sputteringPulsed ion irradiationPhotoconductivityOptical properties |
| spellingShingle | Zhanymgul Koishybayeva Fedor Konusov Sergey Pavlov Dmitrii Sidelev Artur Nassyrbayev Ruslan Gadyrov Vladislav Tarbokov Elena Polisadova Abdirash Akilbekov Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams Optical Materials: X Gallium oxide Thin films Magnetron sputtering Pulsed ion irradiation Photoconductivity Optical properties |
| title | Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams |
| title_full | Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams |
| title_fullStr | Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams |
| title_full_unstemmed | Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams |
| title_short | Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams |
| title_sort | modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 kev c ion beams |
| topic | Gallium oxide Thin films Magnetron sputtering Pulsed ion irradiation Photoconductivity Optical properties |
| url | http://www.sciencedirect.com/science/article/pii/S2590147825000014 |
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