Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams
In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-02-01
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| Series: | Optical Materials: X |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590147825000014 |
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| Summary: | In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed. |
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| ISSN: | 2590-1478 |