Floquet engineering of anomalous Hall effects in monolayer MoS2
Abstract Light-matter interactions have emerged as a new research focus recently offering promises of unveiling novel physics and leading to applications under nonequilibrium conditions. The quantized Hall conductivities predicted by Floquet theory assuming a Fermi-Dirac distribution however deviate...
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Nature Portfolio
2024-11-01
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Series: | npj Quantum Materials |
Online Access: | https://doi.org/10.1038/s41535-024-00702-x |
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author | Haijun Cao Jia-Tao Sun Sheng Meng |
author_facet | Haijun Cao Jia-Tao Sun Sheng Meng |
author_sort | Haijun Cao |
collection | DOAJ |
description | Abstract Light-matter interactions have emerged as a new research focus recently offering promises of unveiling novel physics and leading to applications under nonequilibrium conditions. The quantized Hall conductivities predicted by Floquet theory assuming a Fermi-Dirac distribution however deviate from experimental observations. To resolve these puzzles, we consider the effect of nonequilibrium electron occupation to study the anomalous, valley, and spin Hall effects of a prototype monolayer transition metal dichalcogenide MoS2. We find that spin Hall conductivity can be effectively suppressed approaching zero value by linearly polarized light under near resonant excitations. In contrast, it is substantially enhanced by circularly polarized light, originating from optical selection rules and topological phase transitions. Besides, the quantized anomalous Hall conductivity is much reduced if nonequilibrium occupations of Floquet bands are considered. Our study provides a novel avenue for engineering various Hall effects in two-dimensional materials using light, holding great promises for future device applications. |
format | Article |
id | doaj-art-b1c9860c183f424eb9dfa181e7f3c9c0 |
institution | Kabale University |
issn | 2397-4648 |
language | English |
publishDate | 2024-11-01 |
publisher | Nature Portfolio |
record_format | Article |
series | npj Quantum Materials |
spelling | doaj-art-b1c9860c183f424eb9dfa181e7f3c9c02024-11-17T12:08:23ZengNature Portfolionpj Quantum Materials2397-46482024-11-01911910.1038/s41535-024-00702-xFloquet engineering of anomalous Hall effects in monolayer MoS2Haijun Cao0Jia-Tao Sun1Sheng Meng2Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesSchool of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of TechnologyBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesAbstract Light-matter interactions have emerged as a new research focus recently offering promises of unveiling novel physics and leading to applications under nonequilibrium conditions. The quantized Hall conductivities predicted by Floquet theory assuming a Fermi-Dirac distribution however deviate from experimental observations. To resolve these puzzles, we consider the effect of nonequilibrium electron occupation to study the anomalous, valley, and spin Hall effects of a prototype monolayer transition metal dichalcogenide MoS2. We find that spin Hall conductivity can be effectively suppressed approaching zero value by linearly polarized light under near resonant excitations. In contrast, it is substantially enhanced by circularly polarized light, originating from optical selection rules and topological phase transitions. Besides, the quantized anomalous Hall conductivity is much reduced if nonequilibrium occupations of Floquet bands are considered. Our study provides a novel avenue for engineering various Hall effects in two-dimensional materials using light, holding great promises for future device applications.https://doi.org/10.1038/s41535-024-00702-x |
spellingShingle | Haijun Cao Jia-Tao Sun Sheng Meng Floquet engineering of anomalous Hall effects in monolayer MoS2 npj Quantum Materials |
title | Floquet engineering of anomalous Hall effects in monolayer MoS2 |
title_full | Floquet engineering of anomalous Hall effects in monolayer MoS2 |
title_fullStr | Floquet engineering of anomalous Hall effects in monolayer MoS2 |
title_full_unstemmed | Floquet engineering of anomalous Hall effects in monolayer MoS2 |
title_short | Floquet engineering of anomalous Hall effects in monolayer MoS2 |
title_sort | floquet engineering of anomalous hall effects in monolayer mos2 |
url | https://doi.org/10.1038/s41535-024-00702-x |
work_keys_str_mv | AT haijuncao floquetengineeringofanomaloushalleffectsinmonolayermos2 AT jiataosun floquetengineeringofanomaloushalleffectsinmonolayermos2 AT shengmeng floquetengineeringofanomaloushalleffectsinmonolayermos2 |