Floquet engineering of anomalous Hall effects in monolayer MoS2

Abstract Light-matter interactions have emerged as a new research focus recently offering promises of unveiling novel physics and leading to applications under nonequilibrium conditions. The quantized Hall conductivities predicted by Floquet theory assuming a Fermi-Dirac distribution however deviate...

Full description

Saved in:
Bibliographic Details
Main Authors: Haijun Cao, Jia-Tao Sun, Sheng Meng
Format: Article
Language:English
Published: Nature Portfolio 2024-11-01
Series:npj Quantum Materials
Online Access:https://doi.org/10.1038/s41535-024-00702-x
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1846165574210551808
author Haijun Cao
Jia-Tao Sun
Sheng Meng
author_facet Haijun Cao
Jia-Tao Sun
Sheng Meng
author_sort Haijun Cao
collection DOAJ
description Abstract Light-matter interactions have emerged as a new research focus recently offering promises of unveiling novel physics and leading to applications under nonequilibrium conditions. The quantized Hall conductivities predicted by Floquet theory assuming a Fermi-Dirac distribution however deviate from experimental observations. To resolve these puzzles, we consider the effect of nonequilibrium electron occupation to study the anomalous, valley, and spin Hall effects of a prototype monolayer transition metal dichalcogenide MoS2. We find that spin Hall conductivity can be effectively suppressed approaching zero value by linearly polarized light under near resonant excitations. In contrast, it is substantially enhanced by circularly polarized light, originating from optical selection rules and topological phase transitions. Besides, the quantized anomalous Hall conductivity is much reduced if nonequilibrium occupations of Floquet bands are considered. Our study provides a novel avenue for engineering various Hall effects in two-dimensional materials using light, holding great promises for future device applications.
format Article
id doaj-art-b1c9860c183f424eb9dfa181e7f3c9c0
institution Kabale University
issn 2397-4648
language English
publishDate 2024-11-01
publisher Nature Portfolio
record_format Article
series npj Quantum Materials
spelling doaj-art-b1c9860c183f424eb9dfa181e7f3c9c02024-11-17T12:08:23ZengNature Portfolionpj Quantum Materials2397-46482024-11-01911910.1038/s41535-024-00702-xFloquet engineering of anomalous Hall effects in monolayer MoS2Haijun Cao0Jia-Tao Sun1Sheng Meng2Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesSchool of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of TechnologyBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of SciencesAbstract Light-matter interactions have emerged as a new research focus recently offering promises of unveiling novel physics and leading to applications under nonequilibrium conditions. The quantized Hall conductivities predicted by Floquet theory assuming a Fermi-Dirac distribution however deviate from experimental observations. To resolve these puzzles, we consider the effect of nonequilibrium electron occupation to study the anomalous, valley, and spin Hall effects of a prototype monolayer transition metal dichalcogenide MoS2. We find that spin Hall conductivity can be effectively suppressed approaching zero value by linearly polarized light under near resonant excitations. In contrast, it is substantially enhanced by circularly polarized light, originating from optical selection rules and topological phase transitions. Besides, the quantized anomalous Hall conductivity is much reduced if nonequilibrium occupations of Floquet bands are considered. Our study provides a novel avenue for engineering various Hall effects in two-dimensional materials using light, holding great promises for future device applications.https://doi.org/10.1038/s41535-024-00702-x
spellingShingle Haijun Cao
Jia-Tao Sun
Sheng Meng
Floquet engineering of anomalous Hall effects in monolayer MoS2
npj Quantum Materials
title Floquet engineering of anomalous Hall effects in monolayer MoS2
title_full Floquet engineering of anomalous Hall effects in monolayer MoS2
title_fullStr Floquet engineering of anomalous Hall effects in monolayer MoS2
title_full_unstemmed Floquet engineering of anomalous Hall effects in monolayer MoS2
title_short Floquet engineering of anomalous Hall effects in monolayer MoS2
title_sort floquet engineering of anomalous hall effects in monolayer mos2
url https://doi.org/10.1038/s41535-024-00702-x
work_keys_str_mv AT haijuncao floquetengineeringofanomaloushalleffectsinmonolayermos2
AT jiataosun floquetengineeringofanomaloushalleffectsinmonolayermos2
AT shengmeng floquetengineeringofanomaloushalleffectsinmonolayermos2