Angle-Engineered Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO Thin Films for High-Performance Transverse Thermoelectric Devices
BiCuSeO has emerged as a highly promising material for transverse thermoelectric (TTE) applications, with its performance significantly enhanced through La doping. In this study, we investigate the effect of inclination angle on the TTE performance of inclined Bi<sub>0.94</sub>La<sub&...
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MDPI AG
2025-04-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/25/9/2791 |
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| author | Mingjing Chen Chenming Yue Tianchang Qin Haixu Liu Guoying Yan Shufang Wang |
| author_facet | Mingjing Chen Chenming Yue Tianchang Qin Haixu Liu Guoying Yan Shufang Wang |
| author_sort | Mingjing Chen |
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| description | BiCuSeO has emerged as a highly promising material for transverse thermoelectric (TTE) applications, with its performance significantly enhanced through La doping. In this study, we investigate the effect of inclination angle on the TTE performance of inclined Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO thin films fabricated using the pulsed laser deposition technique. A huge output voltage of 31.4 V was achieved in the 10° inclined Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO film under 308 nm ultraviolet pulsed laser irradiation. Furthermore, the films also exhibited significant response with excellent linearity when exposed to continuous-wave lasers across a broad spectral range (360 nm to 10,600 nm) and a point-like heat source. Notably, the voltage is directly proportional to sin2<i>θ</i>, where <i>θ</i> is the inclination angle. These findings not only provide a clear optimization strategy for TTE performance through inclination angle engineering but also highlight the material’s great potential for developing high-performance optical and thermal sensing TTE devices. |
| format | Article |
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| institution | OA Journals |
| issn | 1424-8220 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | MDPI AG |
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| spelling | doaj-art-b190f2b432ff45feb57761c44f7a5f972025-08-20T02:31:20ZengMDPI AGSensors1424-82202025-04-01259279110.3390/s25092791Angle-Engineered Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO Thin Films for High-Performance Transverse Thermoelectric DevicesMingjing Chen0Chenming Yue1Tianchang Qin2Haixu Liu3Guoying Yan4Shufang Wang5Hebei Key Laboratory of Energy Metering and Safety Testing Technology, National & Local Joint Engineering Research Center of Metrology Instrument and System, College of Quality and Technical Supervision, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Energy Metering and Safety Testing Technology, National & Local Joint Engineering Research Center of Metrology Instrument and System, College of Quality and Technical Supervision, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Energy Metering and Safety Testing Technology, National & Local Joint Engineering Research Center of Metrology Instrument and System, College of Quality and Technical Supervision, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, ChinaHebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, ChinaBiCuSeO has emerged as a highly promising material for transverse thermoelectric (TTE) applications, with its performance significantly enhanced through La doping. In this study, we investigate the effect of inclination angle on the TTE performance of inclined Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO thin films fabricated using the pulsed laser deposition technique. A huge output voltage of 31.4 V was achieved in the 10° inclined Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO film under 308 nm ultraviolet pulsed laser irradiation. Furthermore, the films also exhibited significant response with excellent linearity when exposed to continuous-wave lasers across a broad spectral range (360 nm to 10,600 nm) and a point-like heat source. Notably, the voltage is directly proportional to sin2<i>θ</i>, where <i>θ</i> is the inclination angle. These findings not only provide a clear optimization strategy for TTE performance through inclination angle engineering but also highlight the material’s great potential for developing high-performance optical and thermal sensing TTE devices.https://www.mdpi.com/1424-8220/25/9/2791transverse thermoelectric effectangle-engineeredoptical and thermal sensorsinclined BiCuSeO thin films |
| spellingShingle | Mingjing Chen Chenming Yue Tianchang Qin Haixu Liu Guoying Yan Shufang Wang Angle-Engineered Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO Thin Films for High-Performance Transverse Thermoelectric Devices Sensors transverse thermoelectric effect angle-engineered optical and thermal sensors inclined BiCuSeO thin films |
| title | Angle-Engineered Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO Thin Films for High-Performance Transverse Thermoelectric Devices |
| title_full | Angle-Engineered Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO Thin Films for High-Performance Transverse Thermoelectric Devices |
| title_fullStr | Angle-Engineered Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO Thin Films for High-Performance Transverse Thermoelectric Devices |
| title_full_unstemmed | Angle-Engineered Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO Thin Films for High-Performance Transverse Thermoelectric Devices |
| title_short | Angle-Engineered Bi<sub>0.94</sub>La<sub>0.06</sub>CuSeO Thin Films for High-Performance Transverse Thermoelectric Devices |
| title_sort | angle engineered bi sub 0 94 sub la sub 0 06 sub cuseo thin films for high performance transverse thermoelectric devices |
| topic | transverse thermoelectric effect angle-engineered optical and thermal sensors inclined BiCuSeO thin films |
| url | https://www.mdpi.com/1424-8220/25/9/2791 |
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