A solid-state power amplifier for W band airtight application
In order to meet the power combination requirements of 3 mm band， a novel 8 in 1 high power amplifier， which works at watt level for W band use， is proposed. It achieves module airtightness by utilizing silicon based chips， which is an innovative way for W-band waveguides. The conbiner design is bas...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2024-02-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000163483 |
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