Electrical Transport Characteristics and Deep Level Transient Spectroscopy of Ni/V/n-InP Schottky Barrier Diodes
We report on the temperature-dependent electrical characteristics and deep level transient spectroscopy (DLTS) of the Ni/V/n-InP Schottky diodes in the temperature range of 180-420 K. Current density - voltage (J-V) characteristics of these diodes have been analyzed on the basis of thermionic emissi...
Saved in:
| Main Authors: | V.Rajagopal Reddy, S.Sankar Naik |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2012-05-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2012/2/articles/jnep_2012_V4_02006.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Characterization of in-situ Doped Polycrystalline Silicon Using Schottky Diodes and Admittance Spectroscopy
by: H. Ayed, et al.
Published: (2016-03-01) -
Schottky diodes, sensors, biomedical technologies
by: V. V. Baranov
Published: (2019-06-01) -
Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications
by: Ashish Kumar, et al.
Published: (2011-01-01) -
Using Highly Functional Cr2O3 Interfacial Layer to Enhance the Electrical Performance of Au/InP Schottky Diodes
by: Sreedhar Gari Sai Krupa, et al.
Published: (2025-08-01) -
Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode
by: Vibhor Kumar, et al.
Published: (2012-12-01)