Electrical Transport Characteristics and Deep Level Transient Spectroscopy of Ni/V/n-InP Schottky Barrier Diodes

We report on the temperature-dependent electrical characteristics and deep level transient spectroscopy (DLTS) of the Ni/V/n-InP Schottky diodes in the temperature range of 180-420 K. Current density - voltage (J-V) characteristics of these diodes have been analyzed on the basis of thermionic emissi...

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Bibliographic Details
Main Authors: V.Rajagopal Reddy, S.Sankar Naik
Format: Article
Language:English
Published: Sumy State University 2012-05-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2012/2/articles/jnep_2012_V4_02006.pdf
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