EAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWs
We report the fabrication of a first electro-absorption modulated widely tunable DBR lasers (TEML) based on InGaAlAs multi-quantum well (MQW) material, which is superior than InGaAsP MQWs for the fabrication of both modulators and lasers. The device is fabricated by using butt-joint material growth...
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IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10540218/ |
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| author | Mengyang Zhong Huan Li Daibing Zhou Kun Yang Fei Guo Dan Lu Lingjuan Zhao Song Liang |
| author_facet | Mengyang Zhong Huan Li Daibing Zhou Kun Yang Fei Guo Dan Lu Lingjuan Zhao Song Liang |
| author_sort | Mengyang Zhong |
| collection | DOAJ |
| description | We report the fabrication of a first electro-absorption modulated widely tunable DBR lasers (TEML) based on InGaAlAs multi-quantum well (MQW) material, which is superior than InGaAsP MQWs for the fabrication of both modulators and lasers. The device is fabricated by using butt-joint material growth technology and operates at a wavelength of 1.5 μm. An over 12 nm wavelength tuning range can be obtained. The characteristic temperature of the device is 83 K, which is notably higher than that for a laser based on InGaAsP MQWs. At 25°, the electro-absorption modulator (EAM) of the device has a small signal modulation bandwidth exceeding 27 GHz, which is notably higher than the bandwidth for a TEML device having the same structure but InGaAsP MQW active material. At 25 Gb/s NRZ data modulation, to achieve 10E-10 bit error rate (BER), the power penalty after 5 and 10 km fiber transmission are 1 and 3 dB, respectively. The device is a promising low-cost light source for future high-capacity wavelength division multiplexing (WDM) optical communication systems. |
| format | Article |
| id | doaj-art-b115867ccb0f4461b9dfd8dffa5ebe33 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj-art-b115867ccb0f4461b9dfd8dffa5ebe332025-08-20T03:30:52ZengIEEEIEEE Photonics Journal1943-06552024-01-011651510.1109/JPHOT.2024.340606410540218EAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWsMengyang Zhong0https://orcid.org/0009-0004-6846-954XHuan Li1Daibing Zhou2https://orcid.org/0000-0002-3269-505XKun Yang3Fei Guo4https://orcid.org/0000-0003-3266-5034Dan Lu5https://orcid.org/0000-0001-7811-8250Lingjuan Zhao6https://orcid.org/0000-0003-4630-5689Song Liang7https://orcid.org/0000-0002-5735-7575College of Electronic Information, Zhengzhou University of Light Industry, Zhengzhou, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaCollege of Electronic Information, Zhengzhou University of Light Industry, Zhengzhou, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaWe report the fabrication of a first electro-absorption modulated widely tunable DBR lasers (TEML) based on InGaAlAs multi-quantum well (MQW) material, which is superior than InGaAsP MQWs for the fabrication of both modulators and lasers. The device is fabricated by using butt-joint material growth technology and operates at a wavelength of 1.5 μm. An over 12 nm wavelength tuning range can be obtained. The characteristic temperature of the device is 83 K, which is notably higher than that for a laser based on InGaAsP MQWs. At 25°, the electro-absorption modulator (EAM) of the device has a small signal modulation bandwidth exceeding 27 GHz, which is notably higher than the bandwidth for a TEML device having the same structure but InGaAsP MQW active material. At 25 Gb/s NRZ data modulation, to achieve 10E-10 bit error rate (BER), the power penalty after 5 and 10 km fiber transmission are 1 and 3 dB, respectively. The device is a promising low-cost light source for future high-capacity wavelength division multiplexing (WDM) optical communication systems.https://ieeexplore.ieee.org/document/10540218/Electro-absorption modulatordistributed Bragg reflector (DBR) lasermultiple quantum wells |
| spellingShingle | Mengyang Zhong Huan Li Daibing Zhou Kun Yang Fei Guo Dan Lu Lingjuan Zhao Song Liang EAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWs IEEE Photonics Journal Electro-absorption modulator distributed Bragg reflector (DBR) laser multiple quantum wells |
| title | EAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWs |
| title_full | EAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWs |
| title_fullStr | EAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWs |
| title_full_unstemmed | EAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWs |
| title_short | EAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWs |
| title_sort | eam integrated widely tunable dbr lasers based on ingaalas x002f inp mqws |
| topic | Electro-absorption modulator distributed Bragg reflector (DBR) laser multiple quantum wells |
| url | https://ieeexplore.ieee.org/document/10540218/ |
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