Structural properties of graded In x Ga As metamorphic buffer layers for quantum dots emitting in the telecom bands
In recent years, there has been a significant increase in interest in tuning the emission wavelength of InAs quantum dots (QDs) to wavelengths compatible with the already existing silica fiber networks. In this work, we develop and explore compositionally graded In _x Ga $_{1-x}$ As metamorphic buff...
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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2023-01-01
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| Series: | Materials for Quantum Technology |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2633-4356/aced32 |
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