Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET

Process-Dependent Evolution of Channel Stress and Stress-Induced Mobility Gain in FinFET, Normal GAAFET, and Si/SiGe Hybrid Channel GAAFET

This study investigates the evolution of stress and its induced carrier mobility gain in FinFET, GAAFET, and Si/SiGe hybrid channel GAAFET throughout the process flow using technology computer-aided design (TCAD) tool, which has been calibrated with experimental data from the transmission electron m...

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Bibliographic Details
Main Authors: Chiang Zhu, Xiaona Zhu, Shaofeng Yu, David Wei Zhang
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Access
Subjects:
Carrier mobility
channel stress
FinFET
GAAFET
SiGe channel
TCAD
Online Access:https://ieeexplore.ieee.org/document/10854214/
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