Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films

Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films

A comparison of the dielectric characteristics (relative permittivity, dielectric loss tangent, band gap, leakage current and breakdown voltage) of hafnium and hafnium-zirconium oxide films was carried out. It is shown that pulsed reactive magnetron sputtering of a Hf target in an Ar/O2 working gas...

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Bibliographic Details
Main Authors: D. A. Golosov, J. Zhang, S. M. Zavadski, S. N. Melnikov, H. T. Doan, P. A. Alexandrovitch
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2025-04-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
thin film
hafnium oxide
hafnium zirconium oxide
reactive magnetron sputtering
composite target
dielectric properties
Online Access:https://doklady.bsuir.by/jour/article/view/4106
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