Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films
A comparison of the dielectric characteristics (relative permittivity, dielectric loss tangent, band gap, leakage current and breakdown voltage) of hafnium and hafnium-zirconium oxide films was carried out. It is shown that pulsed reactive magnetron sputtering of a Hf target in an Ar/O2 working gas...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2025-04-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/4106 |
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| author | D. A. Golosov J. Zhang S. M. Zavadski S. N. Melnikov H. T. Doan P. A. Alexandrovitch |
| author_facet | D. A. Golosov J. Zhang S. M. Zavadski S. N. Melnikov H. T. Doan P. A. Alexandrovitch |
| author_sort | D. A. Golosov |
| collection | DOAJ |
| description | A comparison of the dielectric characteristics (relative permittivity, dielectric loss tangent, band gap, leakage current and breakdown voltage) of hafnium and hafnium-zirconium oxide films was carried out. It is shown that pulsed reactive magnetron sputtering of a Hf target in an Ar/O2 working gas environment can be used to obtain HfOx films with a relative permittivity of ε = 12.5–16.0 and ε = 12.0–14.0 at frequencies of F = 1 kHz and F = 1 MHz, respectively, with a dielectric loss tangent of tgα = 0.012–0.022 (F = 1 kHz) and tgα = 0.053–0.062 (F = 1 MHz), a leakage current density of JL = (1.0–3.0) × 10–3 A/m2 at an electric field strength of E = 5 × 107 V/m, with a band gap of Eg = 5.85–5.87 eV and a breakdown field strength of Ebr = (2.1–2.4) × 108 V/m. Doping of hafnium oxide with zirconium (40 at.%) made it possible to reduce the dielectric loss tangent to 0.008–0.012 (F = 1 kHz) and to 0.04–0.05 (F = 1 MHz), the leakage current density to (3–5) × 10–5 A/m2, and increase the breakdown voltage to (2.5–3.0) × 108 V/m. At the same time, a slight increase in the relative permittivity of the films to 14–16 was observed at frequencies of 1 kHz and 1 MHz due to a decrease in frequency dispersion from 1.15 to values less than 1.10 and an increase in Eg to 5.86–5.89 eV. |
| format | Article |
| id | doaj-art-b0cb55ed560247af9d16774dca2e30f6 |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2025-04-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-b0cb55ed560247af9d16774dca2e30f62025-08-20T04:00:43ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482025-04-01232121910.35596/1729-7648-2025-23-2-12-192056Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide FilmsD. A. Golosov0J. Zhang1S. M. Zavadski2S. N. Melnikov3H. T. Doan4P. A. Alexandrovitch5Belarusian State University of Informatics and RadioelectronicsXi’an Technologiсal UniversityBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsVietnam People’s Naval AcademyBelarusian State University of Informatics and RadioelectronicsA comparison of the dielectric characteristics (relative permittivity, dielectric loss tangent, band gap, leakage current and breakdown voltage) of hafnium and hafnium-zirconium oxide films was carried out. It is shown that pulsed reactive magnetron sputtering of a Hf target in an Ar/O2 working gas environment can be used to obtain HfOx films with a relative permittivity of ε = 12.5–16.0 and ε = 12.0–14.0 at frequencies of F = 1 kHz and F = 1 MHz, respectively, with a dielectric loss tangent of tgα = 0.012–0.022 (F = 1 kHz) and tgα = 0.053–0.062 (F = 1 MHz), a leakage current density of JL = (1.0–3.0) × 10–3 A/m2 at an electric field strength of E = 5 × 107 V/m, with a band gap of Eg = 5.85–5.87 eV and a breakdown field strength of Ebr = (2.1–2.4) × 108 V/m. Doping of hafnium oxide with zirconium (40 at.%) made it possible to reduce the dielectric loss tangent to 0.008–0.012 (F = 1 kHz) and to 0.04–0.05 (F = 1 MHz), the leakage current density to (3–5) × 10–5 A/m2, and increase the breakdown voltage to (2.5–3.0) × 108 V/m. At the same time, a slight increase in the relative permittivity of the films to 14–16 was observed at frequencies of 1 kHz and 1 MHz due to a decrease in frequency dispersion from 1.15 to values less than 1.10 and an increase in Eg to 5.86–5.89 eV.https://doklady.bsuir.by/jour/article/view/4106thin filmhafnium oxidehafnium zirconium oxidereactive magnetron sputteringcomposite targetdielectric properties |
| spellingShingle | D. A. Golosov J. Zhang S. M. Zavadski S. N. Melnikov H. T. Doan P. A. Alexandrovitch Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki thin film hafnium oxide hafnium zirconium oxide reactive magnetron sputtering composite target dielectric properties |
| title | Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films |
| title_full | Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films |
| title_fullStr | Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films |
| title_full_unstemmed | Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films |
| title_short | Influence of Zirconium Doping on the Dielectric Properties of Hafnium Oxide Films |
| title_sort | influence of zirconium doping on the dielectric properties of hafnium oxide films |
| topic | thin film hafnium oxide hafnium zirconium oxide reactive magnetron sputtering composite target dielectric properties |
| url | https://doklady.bsuir.by/jour/article/view/4106 |
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