A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier

Memristive characteristics in three-phase diode bridge rectifier circuit are proposed in this paper. The conduction of the diodes is discussed and the characteristics of the pinched hysteresis loop are analyzed by both numerical simulations and circuit simulations. The hysteresis loops of each phase...

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Main Authors: Chaojun Wu, Ningning Yang, Cheng Xu, Rong Jia, Chongxin Liu
Format: Article
Language:English
Published: Wiley 2019-01-01
Series:Complexity
Online Access:http://dx.doi.org/10.1155/2019/1084312
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author Chaojun Wu
Ningning Yang
Cheng Xu
Rong Jia
Chongxin Liu
author_facet Chaojun Wu
Ningning Yang
Cheng Xu
Rong Jia
Chongxin Liu
author_sort Chaojun Wu
collection DOAJ
description Memristive characteristics in three-phase diode bridge rectifier circuit are proposed in this paper. The conduction of the diodes is discussed and the characteristics of the pinched hysteresis loop are analyzed by both numerical simulations and circuit simulations. The hysteresis loops of each phase not only are pinched at the origin but also have the other two intersection points in the first quadrant and the third quadrant when three-phase bridge rectifier circuit is running under normal operation. Other conditions are also discussed when a variety of faults conditions occur. The simulation results verify that the three-phase bridge rectifier circuit can be described as a generalized memristor element during several operation states.
format Article
id doaj-art-b08f4ee3c3a54fc0a74168df636ceb28
institution OA Journals
issn 1076-2787
1099-0526
language English
publishDate 2019-01-01
publisher Wiley
record_format Article
series Complexity
spelling doaj-art-b08f4ee3c3a54fc0a74168df636ceb282025-08-20T02:19:18ZengWileyComplexity1076-27871099-05262019-01-01201910.1155/2019/10843121084312A Novel Generalized Memristor Based on Three-Phase Diode Bridge RectifierChaojun Wu0Ningning Yang1Cheng Xu2Rong Jia3Chongxin Liu4School of Electronics and Information, Xi’an Polytechnic University, Xi’an 710048, ChinaInstitute of Water Resources and Hydroelectric Engineering, Xi’an University of Technology, Xi’an 710048, ChinaInstitute of Water Resources and Hydroelectric Engineering, Xi’an University of Technology, Xi’an 710048, ChinaInstitute of Water Resources and Hydroelectric Engineering, Xi’an University of Technology, Xi’an 710048, ChinaSchool of Electrical Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaMemristive characteristics in three-phase diode bridge rectifier circuit are proposed in this paper. The conduction of the diodes is discussed and the characteristics of the pinched hysteresis loop are analyzed by both numerical simulations and circuit simulations. The hysteresis loops of each phase not only are pinched at the origin but also have the other two intersection points in the first quadrant and the third quadrant when three-phase bridge rectifier circuit is running under normal operation. Other conditions are also discussed when a variety of faults conditions occur. The simulation results verify that the three-phase bridge rectifier circuit can be described as a generalized memristor element during several operation states.http://dx.doi.org/10.1155/2019/1084312
spellingShingle Chaojun Wu
Ningning Yang
Cheng Xu
Rong Jia
Chongxin Liu
A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier
Complexity
title A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier
title_full A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier
title_fullStr A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier
title_full_unstemmed A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier
title_short A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier
title_sort novel generalized memristor based on three phase diode bridge rectifier
url http://dx.doi.org/10.1155/2019/1084312
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