A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier
Memristive characteristics in three-phase diode bridge rectifier circuit are proposed in this paper. The conduction of the diodes is discussed and the characteristics of the pinched hysteresis loop are analyzed by both numerical simulations and circuit simulations. The hysteresis loops of each phase...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2019-01-01
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| Series: | Complexity |
| Online Access: | http://dx.doi.org/10.1155/2019/1084312 |
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| _version_ | 1850176235915706368 |
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| author | Chaojun Wu Ningning Yang Cheng Xu Rong Jia Chongxin Liu |
| author_facet | Chaojun Wu Ningning Yang Cheng Xu Rong Jia Chongxin Liu |
| author_sort | Chaojun Wu |
| collection | DOAJ |
| description | Memristive characteristics in three-phase diode bridge rectifier circuit are proposed in this paper. The conduction of the diodes is discussed and the characteristics of the pinched hysteresis loop are analyzed by both numerical simulations and circuit simulations. The hysteresis loops of each phase not only are pinched at the origin but also have the other two intersection points in the first quadrant and the third quadrant when three-phase bridge rectifier circuit is running under normal operation. Other conditions are also discussed when a variety of faults conditions occur. The simulation results verify that the three-phase bridge rectifier circuit can be described as a generalized memristor element during several operation states. |
| format | Article |
| id | doaj-art-b08f4ee3c3a54fc0a74168df636ceb28 |
| institution | OA Journals |
| issn | 1076-2787 1099-0526 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Complexity |
| spelling | doaj-art-b08f4ee3c3a54fc0a74168df636ceb282025-08-20T02:19:18ZengWileyComplexity1076-27871099-05262019-01-01201910.1155/2019/10843121084312A Novel Generalized Memristor Based on Three-Phase Diode Bridge RectifierChaojun Wu0Ningning Yang1Cheng Xu2Rong Jia3Chongxin Liu4School of Electronics and Information, Xi’an Polytechnic University, Xi’an 710048, ChinaInstitute of Water Resources and Hydroelectric Engineering, Xi’an University of Technology, Xi’an 710048, ChinaInstitute of Water Resources and Hydroelectric Engineering, Xi’an University of Technology, Xi’an 710048, ChinaInstitute of Water Resources and Hydroelectric Engineering, Xi’an University of Technology, Xi’an 710048, ChinaSchool of Electrical Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaMemristive characteristics in three-phase diode bridge rectifier circuit are proposed in this paper. The conduction of the diodes is discussed and the characteristics of the pinched hysteresis loop are analyzed by both numerical simulations and circuit simulations. The hysteresis loops of each phase not only are pinched at the origin but also have the other two intersection points in the first quadrant and the third quadrant when three-phase bridge rectifier circuit is running under normal operation. Other conditions are also discussed when a variety of faults conditions occur. The simulation results verify that the three-phase bridge rectifier circuit can be described as a generalized memristor element during several operation states.http://dx.doi.org/10.1155/2019/1084312 |
| spellingShingle | Chaojun Wu Ningning Yang Cheng Xu Rong Jia Chongxin Liu A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier Complexity |
| title | A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier |
| title_full | A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier |
| title_fullStr | A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier |
| title_full_unstemmed | A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier |
| title_short | A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier |
| title_sort | novel generalized memristor based on three phase diode bridge rectifier |
| url | http://dx.doi.org/10.1155/2019/1084312 |
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