Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors
This study investigates the role of positively charged oxygen vacancies in the central region of ferroelectric capacitors and their impact on fatigue. It has been found that, during fatigue, positively charged oxygen vacancies accumulate in the central region, leading to significant degradation in d...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/11053969/ |
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| author | Hyeon-Seo Do Ik-Jyae Kim Jiwoung Choi Jang-Sik Lee |
| author_facet | Hyeon-Seo Do Ik-Jyae Kim Jiwoung Choi Jang-Sik Lee |
| author_sort | Hyeon-Seo Do |
| collection | DOAJ |
| description | This study investigates the role of positively charged oxygen vacancies in the central region of ferroelectric capacitors and their impact on fatigue. It has been found that, during fatigue, positively charged oxygen vacancies accumulate in the central region, leading to significant degradation in device performance. The application of a high-voltage recovery pulse effectively reverses the charge state of these vacancies from positive to neutral and redistributes them uniformly across the device, restoring its performance. This recovery process is analogous to the ‘wake-up’ state of the device, demonstrating its potential to restore electrical performance. The results of this study emphasize the importance of controlling the charge state and distribution of oxygen vacancies in the central region to enhance the durability and functionality of ferroelectric devices. This work provides a pathway for the broader and more effective application of ferroelectric materials in advanced semiconductor devices. |
| format | Article |
| id | doaj-art-b08922c8a8654c67b18d68777b4a449b |
| institution | DOAJ |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-b08922c8a8654c67b18d68777b4a449b2025-08-20T03:17:46ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011356656910.1109/JEDS.2025.358393111053969Unraveling the Origins of Fatigue in Hafnia Ferroelectric CapacitorsHyeon-Seo Do0https://orcid.org/0009-0006-3232-954XIk-Jyae Kim1https://orcid.org/0000-0002-7560-6811Jiwoung Choi2https://orcid.org/0009-0003-3385-9233Jang-Sik Lee3https://orcid.org/0000-0002-1096-1783Department of Semiconductor Engineering, Pohang University of Science and Technology, Pohang, South KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South KoreaDepartment of Semiconductor Engineering, Pohang University of Science and Technology, Pohang, South KoreaThis study investigates the role of positively charged oxygen vacancies in the central region of ferroelectric capacitors and their impact on fatigue. It has been found that, during fatigue, positively charged oxygen vacancies accumulate in the central region, leading to significant degradation in device performance. The application of a high-voltage recovery pulse effectively reverses the charge state of these vacancies from positive to neutral and redistributes them uniformly across the device, restoring its performance. This recovery process is analogous to the ‘wake-up’ state of the device, demonstrating its potential to restore electrical performance. The results of this study emphasize the importance of controlling the charge state and distribution of oxygen vacancies in the central region to enhance the durability and functionality of ferroelectric devices. This work provides a pathway for the broader and more effective application of ferroelectric materials in advanced semiconductor devices.https://ieeexplore.ieee.org/document/11053969/Ferroelectric materialsferroelectric memoriesferroelectric capacitorsreliabilityfatigueoxygen vacancy |
| spellingShingle | Hyeon-Seo Do Ik-Jyae Kim Jiwoung Choi Jang-Sik Lee Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors IEEE Journal of the Electron Devices Society Ferroelectric materials ferroelectric memories ferroelectric capacitors reliability fatigue oxygen vacancy |
| title | Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors |
| title_full | Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors |
| title_fullStr | Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors |
| title_full_unstemmed | Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors |
| title_short | Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors |
| title_sort | unraveling the origins of fatigue in hafnia ferroelectric capacitors |
| topic | Ferroelectric materials ferroelectric memories ferroelectric capacitors reliability fatigue oxygen vacancy |
| url | https://ieeexplore.ieee.org/document/11053969/ |
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