Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors
The lack of ultra-thin, controllable dielectric layers poses challenges for reducing power consumption in 2D FETs. In this study, plasma-enhanced atomic layer deposition was employed to fabricate a highly reliable, ultra-thin aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) diele...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
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| Series: | Journal of Low Power Electronics and Applications |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9268/15/2/26 |
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