Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors

Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors

The lack of ultra-thin, controllable dielectric layers poses challenges for reducing power consumption in 2D FETs. In this study, plasma-enhanced atomic layer deposition was employed to fabricate a highly reliable, ultra-thin aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) diele...

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Bibliographic Details
Main Authors:	Shiwei Sun, Dinghao Ma, Boxi Ye, Guanshun Liu, Nanting Luo, Hao Huang
Format:	Article
Language:	English
Published:	MDPI AG 2025-04-01
Series:	Journal of Low Power Electronics and Applications
Subjects:	PEALD ultra-thin dielectric low-power devices MOSFETs
Online Access:	https://www.mdpi.com/2079-9268/15/2/26
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