Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors
The lack of ultra-thin, controllable dielectric layers poses challenges for reducing power consumption in 2D FETs. In this study, plasma-enhanced atomic layer deposition was employed to fabricate a highly reliable, ultra-thin aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) diele...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
|
| Series: | Journal of Low Power Electronics and Applications |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9268/15/2/26 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849432579361472512 |
|---|---|
| author | Shiwei Sun Dinghao Ma Boxi Ye Guanshun Liu Nanting Luo Hao Huang |
| author_facet | Shiwei Sun Dinghao Ma Boxi Ye Guanshun Liu Nanting Luo Hao Huang |
| author_sort | Shiwei Sun |
| collection | DOAJ |
| description | The lack of ultra-thin, controllable dielectric layers poses challenges for reducing power consumption in 2D FETs. In this study, plasma-enhanced atomic layer deposition was employed to fabricate a highly reliable, ultra-thin aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) dielectric layer with a thickness of 4 nm. The Al<sub>2</sub>O<sub>3</sub> film grown on highly conductive silicon substrates demonstrated a maximum breakdown field of 5.98 MV/cm and a leakage current density as low as 2.48 × 10<sup>−7</sup> A/cm<sup>2</sup> at 1 MV/cm. MoS<sub>2</sub> FETs incorporating this Al<sub>2</sub>O<sub>3</sub> gate dielectric exhibited high-performance n-type characteristics at a low operating voltage of 1 V, achieving a subthreshold swing (SS) of 65 mV/dec, a threshold voltage (V<sub>th</sub>) of −0.96 V, a high carrier mobility (μ) of 34.85 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, and an on/off current ratio exceeding 10<sup>6</sup>. These results highlight the potential of Al<sub>2</sub>O<sub>3</sub> in enabling low-power 2D electronic devices for post-Moore applications. |
| format | Article |
| id | doaj-art-b0876e0fef504cf28058f58846c1ec9e |
| institution | Kabale University |
| issn | 2079-9268 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Journal of Low Power Electronics and Applications |
| spelling | doaj-art-b0876e0fef504cf28058f58846c1ec9e2025-08-20T03:27:19ZengMDPI AGJournal of Low Power Electronics and Applications2079-92682025-04-011522610.3390/jlpea15020026Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect TransistorsShiwei Sun0Dinghao Ma1Boxi Ye2Guanshun Liu3Nanting Luo4Hao Huang5School of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaSchool of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaSchool of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaSchool of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaSchool of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaSchool of Resources, Environment and Materials, Guangxi University, Nanning 530004, ChinaThe lack of ultra-thin, controllable dielectric layers poses challenges for reducing power consumption in 2D FETs. In this study, plasma-enhanced atomic layer deposition was employed to fabricate a highly reliable, ultra-thin aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) dielectric layer with a thickness of 4 nm. The Al<sub>2</sub>O<sub>3</sub> film grown on highly conductive silicon substrates demonstrated a maximum breakdown field of 5.98 MV/cm and a leakage current density as low as 2.48 × 10<sup>−7</sup> A/cm<sup>2</sup> at 1 MV/cm. MoS<sub>2</sub> FETs incorporating this Al<sub>2</sub>O<sub>3</sub> gate dielectric exhibited high-performance n-type characteristics at a low operating voltage of 1 V, achieving a subthreshold swing (SS) of 65 mV/dec, a threshold voltage (V<sub>th</sub>) of −0.96 V, a high carrier mobility (μ) of 34.85 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, and an on/off current ratio exceeding 10<sup>6</sup>. These results highlight the potential of Al<sub>2</sub>O<sub>3</sub> in enabling low-power 2D electronic devices for post-Moore applications.https://www.mdpi.com/2079-9268/15/2/26PEALDultra-thin dielectriclow-power devicesMOSFETs |
| spellingShingle | Shiwei Sun Dinghao Ma Boxi Ye Guanshun Liu Nanting Luo Hao Huang Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors Journal of Low Power Electronics and Applications PEALD ultra-thin dielectric low-power devices MOSFETs |
| title | Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors |
| title_full | Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors |
| title_fullStr | Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors |
| title_full_unstemmed | Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors |
| title_short | Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors |
| title_sort | ultra thin al sub 2 sub o sub 3 sub grown by peald for low power molybdenum disulfide field effect transistors |
| topic | PEALD ultra-thin dielectric low-power devices MOSFETs |
| url | https://www.mdpi.com/2079-9268/15/2/26 |
| work_keys_str_mv | AT shiweisun ultrathinalsub2subosub3subgrownbypealdforlowpowermolybdenumdisulfidefieldeffecttransistors AT dinghaoma ultrathinalsub2subosub3subgrownbypealdforlowpowermolybdenumdisulfidefieldeffecttransistors AT boxiye ultrathinalsub2subosub3subgrownbypealdforlowpowermolybdenumdisulfidefieldeffecttransistors AT guanshunliu ultrathinalsub2subosub3subgrownbypealdforlowpowermolybdenumdisulfidefieldeffecttransistors AT nantingluo ultrathinalsub2subosub3subgrownbypealdforlowpowermolybdenumdisulfidefieldeffecttransistors AT haohuang ultrathinalsub2subosub3subgrownbypealdforlowpowermolybdenumdisulfidefieldeffecttransistors |