Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors
The lack of ultra-thin, controllable dielectric layers poses challenges for reducing power consumption in 2D FETs. In this study, plasma-enhanced atomic layer deposition was employed to fabricate a highly reliable, ultra-thin aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) diele...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
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| Series: | Journal of Low Power Electronics and Applications |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9268/15/2/26 |
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| Summary: | The lack of ultra-thin, controllable dielectric layers poses challenges for reducing power consumption in 2D FETs. In this study, plasma-enhanced atomic layer deposition was employed to fabricate a highly reliable, ultra-thin aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) dielectric layer with a thickness of 4 nm. The Al<sub>2</sub>O<sub>3</sub> film grown on highly conductive silicon substrates demonstrated a maximum breakdown field of 5.98 MV/cm and a leakage current density as low as 2.48 × 10<sup>−7</sup> A/cm<sup>2</sup> at 1 MV/cm. MoS<sub>2</sub> FETs incorporating this Al<sub>2</sub>O<sub>3</sub> gate dielectric exhibited high-performance n-type characteristics at a low operating voltage of 1 V, achieving a subthreshold swing (SS) of 65 mV/dec, a threshold voltage (V<sub>th</sub>) of −0.96 V, a high carrier mobility (μ) of 34.85 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, and an on/off current ratio exceeding 10<sup>6</sup>. These results highlight the potential of Al<sub>2</sub>O<sub>3</sub> in enabling low-power 2D electronic devices for post-Moore applications. |
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| ISSN: | 2079-9268 |