A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations
Superjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV). However, the fabrication of SJ devices presents significant challenges due to fabrication com...
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MDPI AG
2025-02-01
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| author | Marco Boccarossa Kyrylo Melnyk Arne Benjamin Renz Peter Michael Gammon Viren Kotagama Vishal Ajit Shah Luca Maresca Andrea Irace Marina Antoniou |
| author_facet | Marco Boccarossa Kyrylo Melnyk Arne Benjamin Renz Peter Michael Gammon Viren Kotagama Vishal Ajit Shah Luca Maresca Andrea Irace Marina Antoniou |
| author_sort | Marco Boccarossa |
| collection | DOAJ |
| description | Superjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV). However, the fabrication of SJ devices presents significant challenges due to fabrication complexity. This paper presents a comprehensive analysis of a feasible and easy-to-fabricate semi-superjunction (SSJ) design for 3.3 kV SiC MOSFETs. The proposed approach utilizes trench etching and sidewall implantation, with a tilted trench to facilitate the implantation process. Through Technology Computer-Aided Design (TCAD) simulations, we investigate the effects of the <i>p</i>-type sidewall on the charge balance and how it affects key performance characteristics, such as breakdown voltage (BV) and on-state resistance (R<sub>DS-ON</sub>). In particular, both planar gate (PSSJ) and trench gate (TSSJ) designs are simulated to evaluate their performance improvements over conventional planar MOSFETs. The PSSJ design achieves a 2.5% increase in BV and a 48.7% reduction in R<sub>DS-ON</sub>, while the TSSJ design further optimizes these trade-offs, with a 3.1% improvement in BV and a significant 64.8% reduction in R<sub>DS-ON</sub> compared to the benchmark. These results underscore the potential of tilted trench SSJ designs to significantly enhance the performance of SiC SSJ MOSFETs for high-voltage power electronics while simplifying fabrication and lowering costs. |
| format | Article |
| id | doaj-art-b06a536e54c24fdb926f38d85cd67c9b |
| institution | DOAJ |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-b06a536e54c24fdb926f38d85cd67c9b2025-08-20T03:12:22ZengMDPI AGMicromachines2072-666X2025-02-0116218810.3390/mi16020188A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall ImplantationsMarco Boccarossa0Kyrylo Melnyk1Arne Benjamin Renz2Peter Michael Gammon3Viren Kotagama4Vishal Ajit Shah5Luca Maresca6Andrea Irace7Marina Antoniou8School of Engineering, University of Warwick, Coventry CV4 7AL, UKSchool of Engineering, University of Warwick, Coventry CV4 7AL, UKSchool of Engineering, University of Warwick, Coventry CV4 7AL, UKSchool of Engineering, University of Warwick, Coventry CV4 7AL, UKSchool of Engineering, University of Warwick, Coventry CV4 7AL, UKSchool of Engineering, University of Warwick, Coventry CV4 7AL, UKDepartment of Electrical Engineering and Information Technologies, University of Naples Federico II, Via Claudio 21, 80125 Naples, ItalyDepartment of Electrical Engineering and Information Technologies, University of Naples Federico II, Via Claudio 21, 80125 Naples, ItalySchool of Engineering, University of Warwick, Coventry CV4 7AL, UKSuperjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV). However, the fabrication of SJ devices presents significant challenges due to fabrication complexity. This paper presents a comprehensive analysis of a feasible and easy-to-fabricate semi-superjunction (SSJ) design for 3.3 kV SiC MOSFETs. The proposed approach utilizes trench etching and sidewall implantation, with a tilted trench to facilitate the implantation process. Through Technology Computer-Aided Design (TCAD) simulations, we investigate the effects of the <i>p</i>-type sidewall on the charge balance and how it affects key performance characteristics, such as breakdown voltage (BV) and on-state resistance (R<sub>DS-ON</sub>). In particular, both planar gate (PSSJ) and trench gate (TSSJ) designs are simulated to evaluate their performance improvements over conventional planar MOSFETs. The PSSJ design achieves a 2.5% increase in BV and a 48.7% reduction in R<sub>DS-ON</sub>, while the TSSJ design further optimizes these trade-offs, with a 3.1% improvement in BV and a significant 64.8% reduction in R<sub>DS-ON</sub> compared to the benchmark. These results underscore the potential of tilted trench SSJ designs to significantly enhance the performance of SiC SSJ MOSFETs for high-voltage power electronics while simplifying fabrication and lowering costs.https://www.mdpi.com/2072-666X/16/2/188SiC MOSFETsuperjunctionsemi-superjunctiontrench etchingsidewall implantationtilted trench |
| spellingShingle | Marco Boccarossa Kyrylo Melnyk Arne Benjamin Renz Peter Michael Gammon Viren Kotagama Vishal Ajit Shah Luca Maresca Andrea Irace Marina Antoniou A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations Micromachines SiC MOSFET superjunction semi-superjunction trench etching sidewall implantation tilted trench |
| title | A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations |
| title_full | A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations |
| title_fullStr | A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations |
| title_full_unstemmed | A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations |
| title_short | A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations |
| title_sort | 3 3 kv sic semi superjunction mosfet with trench sidewall implantations |
| topic | SiC MOSFET superjunction semi-superjunction trench etching sidewall implantation tilted trench |
| url | https://www.mdpi.com/2072-666X/16/2/188 |
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