Resistor Model of Layered Film Structures
Electric properties of film structures consisting of two-dimensional layers, composed by nanocrystalline grains of a semiconductor are proposed to be modeled with an equivalent scheme, in which resistors indicate electrical resistance of current channels in metallic contacts, grain material, potenti...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2023-04-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/3595 |
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| _version_ | 1849398342169133056 |
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| author | Tung Pham Van E. B. Chubenko V. E. Borisenko |
| author_facet | Tung Pham Van E. B. Chubenko V. E. Borisenko |
| author_sort | Tung Pham Van |
| collection | DOAJ |
| description | Electric properties of film structures consisting of two-dimensional layers, composed by nanocrystalline grains of a semiconductor are proposed to be modeled with an equivalent scheme, in which resistors indicate electrical resistance of current channels in metallic contacts, grain material, potential barriers between grains and layers. Numerical simulation within the model has shown that there is a nonuniform current distribution over the area of the contacts. Current density at their edges can be 3–6 times higher than in the center. Local currents and their distribution in the film bulk are determined by the grain structure of the film, number of the layers, electronic properties of the barriers between grains and layers. |
| format | Article |
| id | doaj-art-afd1d0a8a39644aab71ec7f87a9872b9 |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2023-04-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-afd1d0a8a39644aab71ec7f87a9872b92025-08-20T03:38:38ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482023-04-01212142010.35596/1729-7648-2023-21-2-14-201885Resistor Model of Layered Film StructuresTung Pham Van0E. B. Chubenko1V. E. Borisenko2Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsElectric properties of film structures consisting of two-dimensional layers, composed by nanocrystalline grains of a semiconductor are proposed to be modeled with an equivalent scheme, in which resistors indicate electrical resistance of current channels in metallic contacts, grain material, potential barriers between grains and layers. Numerical simulation within the model has shown that there is a nonuniform current distribution over the area of the contacts. Current density at their edges can be 3–6 times higher than in the center. Local currents and their distribution in the film bulk are determined by the grain structure of the film, number of the layers, electronic properties of the barriers between grains and layers.https://doklady.bsuir.by/jour/article/view/3595modelinglayered filmequivalent schemeresistorpotential barriercarbon nitridenanocrystal |
| spellingShingle | Tung Pham Van E. B. Chubenko V. E. Borisenko Resistor Model of Layered Film Structures Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki modeling layered film equivalent scheme resistor potential barrier carbon nitride nanocrystal |
| title | Resistor Model of Layered Film Structures |
| title_full | Resistor Model of Layered Film Structures |
| title_fullStr | Resistor Model of Layered Film Structures |
| title_full_unstemmed | Resistor Model of Layered Film Structures |
| title_short | Resistor Model of Layered Film Structures |
| title_sort | resistor model of layered film structures |
| topic | modeling layered film equivalent scheme resistor potential barrier carbon nitride nanocrystal |
| url | https://doklady.bsuir.by/jour/article/view/3595 |
| work_keys_str_mv | AT tungphamvan resistormodeloflayeredfilmstructures AT ebchubenko resistormodeloflayeredfilmstructures AT veborisenko resistormodeloflayeredfilmstructures |