Wide‐Bandgap Rare‐Earth Iodate Single Crystals for Superior X‐Ray Detection and Imaging
Abstract Semiconductor‐based X‐ray detectors with low detectable thresholds become critical in medical radiography applications. However, their performance is generally limited by intrinsic defects or unresolved issues of materials, and developing a novel scintillation semiconductor for low‐dose X‐r...
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| Format: | Article |
| Language: | English |
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Wiley
2023-05-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202206833 |
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| author | Xieming Xu Fang Wang Weiwei Xu Hao Lu Lingfei Lv Hongyuan Sha Xiaoming Jiang Shaofan Wu Shuaihua Wang |
| author_facet | Xieming Xu Fang Wang Weiwei Xu Hao Lu Lingfei Lv Hongyuan Sha Xiaoming Jiang Shaofan Wu Shuaihua Wang |
| author_sort | Xieming Xu |
| collection | DOAJ |
| description | Abstract Semiconductor‐based X‐ray detectors with low detectable thresholds become critical in medical radiography applications. However, their performance is generally limited by intrinsic defects or unresolved issues of materials, and developing a novel scintillation semiconductor for low‐dose X‐ray detection is a highly urgent objective. Herein, a high‐quality rare‐earth iodate Tm(IO3)3 single crystal grown through low‐cost solution processing is reported with a wide bandgap of 4.1 eV and a large atomic number of 53.2. The roles of IO and TmO groups for charge transport in the Tm(IO3)3 are revealed with the structural difference between the [101] and [1¯01] crystal orientations. Based on anisotropic responses of material properties and detection performances, it is found that the [1¯01] orientation, the path with fewer IO groups, achieves a high resistivity of 1.02 × 1011 Ω cm. Consequently, a single‐crystal detector exhibits a low dark current and small baseline drifting due to the wide bandgap, high resistivity and less ion migration of Tm(IO3)3, resulting in a low detection limit of 85.2 nGyair s−1. An excellent X‐ray imaging performance with a high sensitivity of 4406.6 µC Gyair−1 cm−2 is also shown in the Tm(IO3)3 device. These findings provide a new material design perspective for high‐performance X‐ray imaging applications. |
| format | Article |
| id | doaj-art-af54a68605d3483192dacbd542551024 |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2023-05-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-af54a68605d3483192dacbd5425510242025-08-20T04:01:01ZengWileyAdvanced Science2198-38442023-05-011014n/an/a10.1002/advs.202206833Wide‐Bandgap Rare‐Earth Iodate Single Crystals for Superior X‐Ray Detection and ImagingXieming Xu0Fang Wang1Weiwei Xu2Hao Lu3Lingfei Lv4Hongyuan Sha5Xiaoming Jiang6Shaofan Wu7Shuaihua Wang8Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 ChinaKey Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 ChinaKey Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 ChinaKey Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 ChinaKey Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 ChinaKey Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 ChinaKey Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 ChinaKey Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 ChinaKey Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 ChinaAbstract Semiconductor‐based X‐ray detectors with low detectable thresholds become critical in medical radiography applications. However, their performance is generally limited by intrinsic defects or unresolved issues of materials, and developing a novel scintillation semiconductor for low‐dose X‐ray detection is a highly urgent objective. Herein, a high‐quality rare‐earth iodate Tm(IO3)3 single crystal grown through low‐cost solution processing is reported with a wide bandgap of 4.1 eV and a large atomic number of 53.2. The roles of IO and TmO groups for charge transport in the Tm(IO3)3 are revealed with the structural difference between the [101] and [1¯01] crystal orientations. Based on anisotropic responses of material properties and detection performances, it is found that the [1¯01] orientation, the path with fewer IO groups, achieves a high resistivity of 1.02 × 1011 Ω cm. Consequently, a single‐crystal detector exhibits a low dark current and small baseline drifting due to the wide bandgap, high resistivity and less ion migration of Tm(IO3)3, resulting in a low detection limit of 85.2 nGyair s−1. An excellent X‐ray imaging performance with a high sensitivity of 4406.6 µC Gyair−1 cm−2 is also shown in the Tm(IO3)3 device. These findings provide a new material design perspective for high‐performance X‐ray imaging applications.https://doi.org/10.1002/advs.202206833anisotropic responserare‐earth iodateswide bandgapX‐ray detectionX‐ray imaging |
| spellingShingle | Xieming Xu Fang Wang Weiwei Xu Hao Lu Lingfei Lv Hongyuan Sha Xiaoming Jiang Shaofan Wu Shuaihua Wang Wide‐Bandgap Rare‐Earth Iodate Single Crystals for Superior X‐Ray Detection and Imaging Advanced Science anisotropic response rare‐earth iodates wide bandgap X‐ray detection X‐ray imaging |
| title | Wide‐Bandgap Rare‐Earth Iodate Single Crystals for Superior X‐Ray Detection and Imaging |
| title_full | Wide‐Bandgap Rare‐Earth Iodate Single Crystals for Superior X‐Ray Detection and Imaging |
| title_fullStr | Wide‐Bandgap Rare‐Earth Iodate Single Crystals for Superior X‐Ray Detection and Imaging |
| title_full_unstemmed | Wide‐Bandgap Rare‐Earth Iodate Single Crystals for Superior X‐Ray Detection and Imaging |
| title_short | Wide‐Bandgap Rare‐Earth Iodate Single Crystals for Superior X‐Ray Detection and Imaging |
| title_sort | wide bandgap rare earth iodate single crystals for superior x ray detection and imaging |
| topic | anisotropic response rare‐earth iodates wide bandgap X‐ray detection X‐ray imaging |
| url | https://doi.org/10.1002/advs.202206833 |
| work_keys_str_mv | AT xiemingxu widebandgaprareearthiodatesinglecrystalsforsuperiorxraydetectionandimaging AT fangwang widebandgaprareearthiodatesinglecrystalsforsuperiorxraydetectionandimaging AT weiweixu widebandgaprareearthiodatesinglecrystalsforsuperiorxraydetectionandimaging AT haolu widebandgaprareearthiodatesinglecrystalsforsuperiorxraydetectionandimaging AT lingfeilv widebandgaprareearthiodatesinglecrystalsforsuperiorxraydetectionandimaging AT hongyuansha widebandgaprareearthiodatesinglecrystalsforsuperiorxraydetectionandimaging AT xiaomingjiang widebandgaprareearthiodatesinglecrystalsforsuperiorxraydetectionandimaging AT shaofanwu widebandgaprareearthiodatesinglecrystalsforsuperiorxraydetectionandimaging AT shuaihuawang widebandgaprareearthiodatesinglecrystalsforsuperiorxraydetectionandimaging |