Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors
Abstract Analytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered by a 2D‐semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emer...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-04-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400495 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849738133704278016 |
|---|---|
| author | Anna N. Morozovska Eugene A. Eliseev Yulian M. Vysochanskii Sergei V. Kalinin Maksym V. Strikha |
| author_facet | Anna N. Morozovska Eugene A. Eliseev Yulian M. Vysochanskii Sergei V. Kalinin Maksym V. Strikha |
| author_sort | Anna N. Morozovska |
| collection | DOAJ |
| description | Abstract Analytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered by a 2D‐semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the thin films. The NC state is conditioned by energy‐degenerated poly‐domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET‐type heterostructure “ferrielectric CuInP2S6 film—2D‐MoS2 single‐layer—SiO2 dielectric layer” reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann's limit. Obtained results can be useful for the size and temperature control of the NC effect in the steep‐slope ferrielectric FETs. |
| format | Article |
| id | doaj-art-af0f7339be26455ca1f85c8e0dd125f2 |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-af0f7339be26455ca1f85c8e0dd125f22025-08-20T03:06:43ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-04-01114n/an/a10.1002/aelm.202400495Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect TransistorsAnna N. Morozovska0Eugene A. Eliseev1Yulian M. Vysochanskii2Sergei V. Kalinin3Maksym V. Strikha4Institute of Physics National Academy of Sciences of Ukraine Pr. Nauky 46 Kyiv 03028 UkraineFrantsevich Institute for Problems in Materials Science National Academy of Sciences of Ukraine Str. Omeliana Pritsaka 3 Kyiv 03142 UkraineInstitute of Solid State Physics and Chemistry Uzhhorod University Uzhhorod 88000 UkraineDepartment of Materials Science and Engineering University of Tennessee Knoxville TN 37996 USATaras Shevchenko National University of Kyiv Faculty of Radiophysics Electronics and Computer Systems Pr. Akademika Hlushkova 4g Kyiv 03022 UkraineAbstract Analytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered by a 2D‐semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the thin films. The NC state is conditioned by energy‐degenerated poly‐domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET‐type heterostructure “ferrielectric CuInP2S6 film—2D‐MoS2 single‐layer—SiO2 dielectric layer” reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann's limit. Obtained results can be useful for the size and temperature control of the NC effect in the steep‐slope ferrielectric FETs.https://doi.org/10.1002/aelm.202400495field‐effect transistorsnegative capacitancevan der Waals ferrielectrics |
| spellingShingle | Anna N. Morozovska Eugene A. Eliseev Yulian M. Vysochanskii Sergei V. Kalinin Maksym V. Strikha Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors Advanced Electronic Materials field‐effect transistors negative capacitance van der Waals ferrielectrics |
| title | Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors |
| title_full | Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors |
| title_fullStr | Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors |
| title_full_unstemmed | Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors |
| title_short | Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors |
| title_sort | size effect of negative capacitance state and subthreshold swing in van der waals ferrielectric field effect transistors |
| topic | field‐effect transistors negative capacitance van der Waals ferrielectrics |
| url | https://doi.org/10.1002/aelm.202400495 |
| work_keys_str_mv | AT annanmorozovska sizeeffectofnegativecapacitancestateandsubthresholdswinginvanderwaalsferrielectricfieldeffecttransistors AT eugeneaeliseev sizeeffectofnegativecapacitancestateandsubthresholdswinginvanderwaalsferrielectricfieldeffecttransistors AT yulianmvysochanskii sizeeffectofnegativecapacitancestateandsubthresholdswinginvanderwaalsferrielectricfieldeffecttransistors AT sergeivkalinin sizeeffectofnegativecapacitancestateandsubthresholdswinginvanderwaalsferrielectricfieldeffecttransistors AT maksymvstrikha sizeeffectofnegativecapacitancestateandsubthresholdswinginvanderwaalsferrielectricfieldeffecttransistors |