Comparative Study of Steep Switching Devices for 1T Dynamic Memory
This work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero impact ionization FET (Z2-FET), and Tunnel Field E...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Instituto Tecnológico de Costa Rica
2024-06-01
|
| Series: | Tecnología en Marcha |
| Subjects: | |
| Online Access: | https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/7224 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|