Comparative Study of Steep Switching Devices for 1T Dynamic Memory
This work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero impact ionization FET (Z2-FET), and Tunnel Field E...
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Instituto Tecnológico de Costa Rica
2024-06-01
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| Series: | Tecnología en Marcha |
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| Online Access: | https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/7224 |
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| author | Nupur Navlakha Hasan Raza Ansari Leonard Register Sanjay Banerjee |
| author_facet | Nupur Navlakha Hasan Raza Ansari Leonard Register Sanjay Banerjee |
| author_sort | Nupur Navlakha |
| collection | DOAJ |
| description | This work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero impact ionization FET (Z2-FET), and Tunnel Field Effect Transistor (TFET) as capacitorless dynamic memory. Functionality as 1T DRAM depends on creation of potential well which must be induced in a p-i-n structure, achieved through precise doping of p-region (TCCT), asymmetric gate alignment (Z2FET, TFET) and use of two independent gates (FED and twin gate TFET). While TCCT, FED and Z2FET operate in forward bias, TFET operates in reverse bias. The work shows a comparative analysis of these devices in terms of retention time, sense margin, current ratio, power and speed which are crucial metrics for future DRAMs and also provides a guideline for application specific design. |
| format | Article |
| id | doaj-art-ae54da2e4a784aa9b2ded38ca6baaaca |
| institution | OA Journals |
| issn | 0379-3982 2215-3241 |
| language | English |
| publishDate | 2024-06-01 |
| publisher | Instituto Tecnológico de Costa Rica |
| record_format | Article |
| series | Tecnología en Marcha |
| spelling | doaj-art-ae54da2e4a784aa9b2ded38ca6baaaca2025-08-20T01:59:53ZengInstituto Tecnológico de Costa RicaTecnología en Marcha0379-39822215-32412024-06-01ág. 11011710.18845/tm.v37i5.72246510Comparative Study of Steep Switching Devices for 1T Dynamic MemoryNupur Navlakha0Hasan Raza Ansari1Leonard Register2Sanjay Banerjee3The University of Texas at AustinKing Abdullah University of Science and Technology (KAUST) The University of Texas at Austin The University of Texas at AustinThis work focuses on understanding the operation and performance of various steep switching devices (subthreshold slope sub 60 mV/decade), namely Thin-Capacitively Coupled Thyristor (TCCT), Field Effect Diode (FED), Zero sub-threshold swing and Zero impact ionization FET (Z2-FET), and Tunnel Field Effect Transistor (TFET) as capacitorless dynamic memory. Functionality as 1T DRAM depends on creation of potential well which must be induced in a p-i-n structure, achieved through precise doping of p-region (TCCT), asymmetric gate alignment (Z2FET, TFET) and use of two independent gates (FED and twin gate TFET). While TCCT, FED and Z2FET operate in forward bias, TFET operates in reverse bias. The work shows a comparative analysis of these devices in terms of retention time, sense margin, current ratio, power and speed which are crucial metrics for future DRAMs and also provides a guideline for application specific design.https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/7224dynamic memorycapacitorlesstunnel field effect transistorzero sub-threshold swingzero impact ionization fetthin-capacitively coupled thyristorfield effect dioderetention timepower |
| spellingShingle | Nupur Navlakha Hasan Raza Ansari Leonard Register Sanjay Banerjee Comparative Study of Steep Switching Devices for 1T Dynamic Memory Tecnología en Marcha dynamic memory capacitorless tunnel field effect transistor zero sub-threshold swing zero impact ionization fet thin-capacitively coupled thyristor field effect diode retention time power |
| title | Comparative Study of Steep Switching Devices for 1T Dynamic Memory |
| title_full | Comparative Study of Steep Switching Devices for 1T Dynamic Memory |
| title_fullStr | Comparative Study of Steep Switching Devices for 1T Dynamic Memory |
| title_full_unstemmed | Comparative Study of Steep Switching Devices for 1T Dynamic Memory |
| title_short | Comparative Study of Steep Switching Devices for 1T Dynamic Memory |
| title_sort | comparative study of steep switching devices for 1t dynamic memory |
| topic | dynamic memory capacitorless tunnel field effect transistor zero sub-threshold swing zero impact ionization fet thin-capacitively coupled thyristor field effect diode retention time power |
| url | https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/7224 |
| work_keys_str_mv | AT nupurnavlakha comparativestudyofsteepswitchingdevicesfor1tdynamicmemory AT hasanrazaansari comparativestudyofsteepswitchingdevicesfor1tdynamicmemory AT leonardregister comparativestudyofsteepswitchingdevicesfor1tdynamicmemory AT sanjaybanerjee comparativestudyofsteepswitchingdevicesfor1tdynamicmemory |