The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells
For optimum performance of the hydrogenated amorphous silicon/crystalline silicon (a-Si : H/c-Si) heterojunction solar cells, featuring a doping concentration, localized states, as well as thickness of emitter layer are crucial, since Fermi level, surface passivated quality, and light absorption hav...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/283872 |
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| author | Youngseok Lee Vinh Ai Dao Sangho Kim Sunbo Kim Hyeongsik Park Jaehyun Cho Shihyun Ahn Junsin Yi |
| author_facet | Youngseok Lee Vinh Ai Dao Sangho Kim Sunbo Kim Hyeongsik Park Jaehyun Cho Shihyun Ahn Junsin Yi |
| author_sort | Youngseok Lee |
| collection | DOAJ |
| description | For optimum performance of the hydrogenated amorphous silicon/crystalline silicon (a-Si : H/c-Si) heterojunction solar cells, featuring a doping concentration, localized states, as well as thickness of emitter layer are crucial, since Fermi level, surface passivated quality, and light absorption have to be compromised themselves. For this purpose, the effect of both doping concentration and thickness of emitter layer was investigated. It was found that with gas phase doping concentration and emitter layer thickness of 3% and 7 nm, solar cell efficiency in excess of 14.6% can be achieved. For high gas phase doping concentration, the degradation of open-circuit voltage as well as cell efficiency was obtained due to the higher disorder in the emitter layer. The heavily doped along with thicker in thickness of emitter layer results in light absorption on short wavelength, then diminishing short-circuit current density. |
| format | Article |
| id | doaj-art-ae1d64b2642942259a814d16616eb95c |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-ae1d64b2642942259a814d16616eb95c2025-02-03T01:22:34ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/283872283872The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar CellsYoungseok Lee0Vinh Ai Dao1Sangho Kim2Sunbo Kim3Hyeongsik Park4Jaehyun Cho5Shihyun Ahn6Junsin Yi7Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of KoreaCollege of Science, Faculty of Materials Science, Vietnam National University, 227 Nguyen Van Cu, Hochiminh, VietnamDepartment of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of KoreaSchool of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of KoreaSchool of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of KoreaSchool of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of KoreaSchool of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of KoreaDepartment of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of KoreaFor optimum performance of the hydrogenated amorphous silicon/crystalline silicon (a-Si : H/c-Si) heterojunction solar cells, featuring a doping concentration, localized states, as well as thickness of emitter layer are crucial, since Fermi level, surface passivated quality, and light absorption have to be compromised themselves. For this purpose, the effect of both doping concentration and thickness of emitter layer was investigated. It was found that with gas phase doping concentration and emitter layer thickness of 3% and 7 nm, solar cell efficiency in excess of 14.6% can be achieved. For high gas phase doping concentration, the degradation of open-circuit voltage as well as cell efficiency was obtained due to the higher disorder in the emitter layer. The heavily doped along with thicker in thickness of emitter layer results in light absorption on short wavelength, then diminishing short-circuit current density.http://dx.doi.org/10.1155/2012/283872 |
| spellingShingle | Youngseok Lee Vinh Ai Dao Sangho Kim Sunbo Kim Hyeongsik Park Jaehyun Cho Shihyun Ahn Junsin Yi The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells International Journal of Photoenergy |
| title | The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells |
| title_full | The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells |
| title_fullStr | The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells |
| title_full_unstemmed | The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells |
| title_short | The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells |
| title_sort | compromise condition for high performance of the single silicon heterojunction solar cells |
| url | http://dx.doi.org/10.1155/2012/283872 |
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