Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as <inline-formula> &l...
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10714381/ |
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| author | Yuxin Liu Qiang Liu Jin Chen Zhiqiang Mu Xing Wei Wenjie Yu |
| author_facet | Yuxin Liu Qiang Liu Jin Chen Zhiqiang Mu Xing Wei Wenjie Yu |
| author_sort | Yuxin Liu |
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| description | The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm { d}}$ </tex-math></inline-formula> increases, which has rarely been reported in devices with other gate structures. In particular, the SS of the device reaches the minimum ~0.1mV/dec with no discernable hysteresis window at <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm { d}} {=} 4.5$ </tex-math></inline-formula>V under ambient condition. Further device simulation strongly confirms the unique role of the GAA controllability over the hysteresis-free kink process. These findings contribute to a better understanding of kink behaviors within GAA device for potential application. |
| format | Article |
| id | doaj-art-ade47bb3d02c4bd2b94e019a0e3a42b1 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-ade47bb3d02c4bd2b94e019a0e3a42b12025-01-29T00:00:24ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011294194710.1109/JEDS.2024.347875010714381Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator TechnologyYuxin Liu0https://orcid.org/0009-0000-6987-8741Qiang Liu1https://orcid.org/0000-0002-6859-1770Jin Chen2https://orcid.org/0009-0003-2568-1148Zhiqiang Mu3https://orcid.org/0000-0002-3406-8957Xing Wei4https://orcid.org/0000-0002-5316-0011Wenjie Yu5National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaNational Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, ChinaThe kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm { d}}$ </tex-math></inline-formula> increases, which has rarely been reported in devices with other gate structures. In particular, the SS of the device reaches the minimum ~0.1mV/dec with no discernable hysteresis window at <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm { d}} {=} 4.5$ </tex-math></inline-formula>V under ambient condition. Further device simulation strongly confirms the unique role of the GAA controllability over the hysteresis-free kink process. These findings contribute to a better understanding of kink behaviors within GAA device for potential application.https://ieeexplore.ieee.org/document/10714381/Kink effectgate-all-aroundvoid embedded silicon on insulator substrateaverage subthreshold swing and hysteresis-free |
| spellingShingle | Yuxin Liu Qiang Liu Jin Chen Zhiqiang Mu Xing Wei Wenjie Yu Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology IEEE Journal of the Electron Devices Society Kink effect gate-all-around void embedded silicon on insulator substrate average subthreshold swing and hysteresis-free |
| title | Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology |
| title_full | Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology |
| title_fullStr | Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology |
| title_full_unstemmed | Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology |
| title_short | Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology |
| title_sort | subthreshold kink effect in gate all around mosfets based on void embedded silicon on insulator technology |
| topic | Kink effect gate-all-around void embedded silicon on insulator substrate average subthreshold swing and hysteresis-free |
| url | https://ieeexplore.ieee.org/document/10714381/ |
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