Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology
The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as <inline-formula> &l...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10714381/ |
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| Summary: | The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm { d}}$ </tex-math></inline-formula> increases, which has rarely been reported in devices with other gate structures. In particular, the SS of the device reaches the minimum ~0.1mV/dec with no discernable hysteresis window at <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm { d}} {=} 4.5$ </tex-math></inline-formula>V under ambient condition. Further device simulation strongly confirms the unique role of the GAA controllability over the hysteresis-free kink process. These findings contribute to a better understanding of kink behaviors within GAA device for potential application. |
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| ISSN: | 2168-6734 |