Tailoring ETL/HTL combinations for high-performance ITO/i-ZnO/ZnS/SnSe/SnTe solar cells: A simulation approach
This computational study employs SCAPS-1D simulations to systematically investigate the performance of SnSe-based solar cells through comprehensive multi-parameter optimization. We explored the critical impacts of hole transport layers (HTLs: MoS2, MoTe2, P-Graphene, SnTe) and electron transport lay...
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Elsevier
2025-01-01
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| Series: | Results in Surfaces and Interfaces |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666845924002319 |
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| author | Mohanad Q. Kareem Shaheen S. Alimardan Wlla M. Mohammad Intisar M. Khudhair |
| author_facet | Mohanad Q. Kareem Shaheen S. Alimardan Wlla M. Mohammad Intisar M. Khudhair |
| author_sort | Mohanad Q. Kareem |
| collection | DOAJ |
| description | This computational study employs SCAPS-1D simulations to systematically investigate the performance of SnSe-based solar cells through comprehensive multi-parameter optimization. We explored the critical impacts of hole transport layers (HTLs: MoS2, MoTe2, P-Graphene, SnTe) and electron transport layers (ETLs: CdS, SnS2, STO, ZnS, ZnSe) on photovoltaic characteristics. Detailed analyses of J-V characteristics and quantum efficiency (QE-λ) curves revealed significant variations in solar cell performance across different layer configurations. By meticulously examining layer thicknesses, energy gaps, electron affinities, carrier densities, and interface defect characteristics, we identified optimal device parameters. Our investigation demonstrated that strategic material selection and precise layer engineering can dramatically influence photovoltaic performance. Critical parameters such as interface defect densities, work functions, and resistance mechanisms were found to substantially impact short-circuit current (Jsc), open-circuit voltage (Voc), fill factor (FF), and overall power conversion efficiency (PCE). The simulation achieved an impressive power conversion efficiency (PCE) of 34.322%, with key performance metrics of 0.856 V open-circuit voltage (Voc), 48.279 mA/cm2 short-circuit current density (Jsc), and 83.049% fill factor (FF). Critical insights emerged regarding the significant impacts of contact work functions, series resistance, and interface defect densities on device performance. These findings provide valuable guidance for designing next-generation SnSe-based photovoltaic devices, underscore the importance of precise material engineering, and interface management in high-efficiency solar cell development. |
| format | Article |
| id | doaj-art-adb899f630cd43d49ed1e86a36975efb |
| institution | DOAJ |
| issn | 2666-8459 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Surfaces and Interfaces |
| spelling | doaj-art-adb899f630cd43d49ed1e86a36975efb2025-08-20T02:57:33ZengElsevierResults in Surfaces and Interfaces2666-84592025-01-011810041110.1016/j.rsurfi.2024.100411Tailoring ETL/HTL combinations for high-performance ITO/i-ZnO/ZnS/SnSe/SnTe solar cells: A simulation approachMohanad Q. Kareem0Shaheen S. Alimardan1Wlla M. Mohammad2Intisar M. Khudhair3Department of Physics, College of Science, University of Kirkuk, Kirkuk, Iraq; Corresponding author.Department of Physics, College of Science, University of Kirkuk, Kirkuk, IraqDepartment of Physics, College Pure Education of Science, University of Tikrit, Tikrit, IraqDepartment of Agricultural Mechanical Technologies, Al-Musayyib Technical Institute, University of Al-Furat Al-Awsat, Babel, IraqThis computational study employs SCAPS-1D simulations to systematically investigate the performance of SnSe-based solar cells through comprehensive multi-parameter optimization. We explored the critical impacts of hole transport layers (HTLs: MoS2, MoTe2, P-Graphene, SnTe) and electron transport layers (ETLs: CdS, SnS2, STO, ZnS, ZnSe) on photovoltaic characteristics. Detailed analyses of J-V characteristics and quantum efficiency (QE-λ) curves revealed significant variations in solar cell performance across different layer configurations. By meticulously examining layer thicknesses, energy gaps, electron affinities, carrier densities, and interface defect characteristics, we identified optimal device parameters. Our investigation demonstrated that strategic material selection and precise layer engineering can dramatically influence photovoltaic performance. Critical parameters such as interface defect densities, work functions, and resistance mechanisms were found to substantially impact short-circuit current (Jsc), open-circuit voltage (Voc), fill factor (FF), and overall power conversion efficiency (PCE). The simulation achieved an impressive power conversion efficiency (PCE) of 34.322%, with key performance metrics of 0.856 V open-circuit voltage (Voc), 48.279 mA/cm2 short-circuit current density (Jsc), and 83.049% fill factor (FF). Critical insights emerged regarding the significant impacts of contact work functions, series resistance, and interface defect densities on device performance. These findings provide valuable guidance for designing next-generation SnSe-based photovoltaic devices, underscore the importance of precise material engineering, and interface management in high-efficiency solar cell development.http://www.sciencedirect.com/science/article/pii/S2666845924002319SnSe solar cellSCAPS-1D simulationsDefect densityShunt resistanceSnTe |
| spellingShingle | Mohanad Q. Kareem Shaheen S. Alimardan Wlla M. Mohammad Intisar M. Khudhair Tailoring ETL/HTL combinations for high-performance ITO/i-ZnO/ZnS/SnSe/SnTe solar cells: A simulation approach Results in Surfaces and Interfaces SnSe solar cell SCAPS-1D simulations Defect density Shunt resistance SnTe |
| title | Tailoring ETL/HTL combinations for high-performance ITO/i-ZnO/ZnS/SnSe/SnTe solar cells: A simulation approach |
| title_full | Tailoring ETL/HTL combinations for high-performance ITO/i-ZnO/ZnS/SnSe/SnTe solar cells: A simulation approach |
| title_fullStr | Tailoring ETL/HTL combinations for high-performance ITO/i-ZnO/ZnS/SnSe/SnTe solar cells: A simulation approach |
| title_full_unstemmed | Tailoring ETL/HTL combinations for high-performance ITO/i-ZnO/ZnS/SnSe/SnTe solar cells: A simulation approach |
| title_short | Tailoring ETL/HTL combinations for high-performance ITO/i-ZnO/ZnS/SnSe/SnTe solar cells: A simulation approach |
| title_sort | tailoring etl htl combinations for high performance ito i zno zns snse snte solar cells a simulation approach |
| topic | SnSe solar cell SCAPS-1D simulations Defect density Shunt resistance SnTe |
| url | http://www.sciencedirect.com/science/article/pii/S2666845924002319 |
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